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IPAN80R280P7XKSA1

IPAN80R280P7XKSA1
Mfr. #:
IPAN80R280P7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET LOW POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPAN80R280P7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPAN80R280P7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
17 A
Rds On - Resistencia de la fuente de drenaje:
240 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
36 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
30 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Serie:
CoolMOS P7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
6 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 ns
Tiempo típico de retardo de encendido:
10 ns
Parte # Alias:
IPAN80R280P7 SP001632934
Unidad de peso:
0.068784 oz
Tags
IPAN8, IPAN, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 280 mOhm 36 nC CoolMOS™ Power Mosfet - TO-220-3FP
***i-Key
MOSFET N-CH 800V COOLMOS TO220-3
***ical
800VCoolMOS P7 Power Transistor
***et Europe
LOW POWER_NEW
***ark
MOSFET, N-CH, 800V, 17A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.24ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 17A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.24ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:30W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 17A, TO-220FP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:17A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.24ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:30W; Modello Case Transistor:TO-220FP; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Parte # Mfg. Descripción Valores Precio
IPAN80R280P7XKSA1
DISTI # IPAN80R280P7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 800V COOLMOS TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 5000:$1.4089
  • 2500:$1.4640
  • 500:$1.8272
  • 100:$2.1464
  • 25:$2.4768
  • 10:$2.6200
  • 1:$2.9200
IPAN80R280P7XKSA1
DISTI # SP001632934		Infineon Technologies AGLOW POWER_NEW (Alt: SP001632934)
RoHS: Compliant
Min Qty: 50		Europe - 590
  • 500:€1.1900
  • 300:€1.2900
  • 200:€1.3900
  • 100:€1.6900
  • 50:€2.1900
IPAN80R280P7XKSA1
DISTI # IPAN80R280P7XKSA1		Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPAN80R280P7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 3000:$1.2900
  • 5000:$1.2900
  • 1000:$1.3900
  • 2000:$1.3900
  • 500:$1.4900
IPAN80R280P7XKSA1
DISTI # 726-IPAN80R280P7XKSA		Infineon Technologies AGMOSFET LOW POWER_NEW
RoHS: Compliant		20
  • 1:$2.7700
  • 10:$2.3500
  • 100:$2.0400
  • 250:$1.9400
  • 500:$1.7400
  • 1000:$1.4600
  • 2500:$1.3900
  • 5000:$1.3400
IPAN80R280P7XKSA1
DISTI # IPAN80R280P7		Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,10.6A,30W,TO220FP10
  • 50:$1.8600
  • 10:$2.0700
  • 3:$2.3400
  • 1:$2.6000
IPAN80R280P7XKSA1
DISTI # 2771317		Infineon Technologies AGMOSFET, N-CH, 800V, 17A, TO-220FP
RoHS: Compliant		430
  • 25:$3.7400
  • 10:$3.9500
  • 1:$4.4000
IPAN80R280P7XKSA1
DISTI # XSKDRABV0021203		Infineon Technologies AGPower Supply Support Circuit, Fixed, 1 Channel,BICMOS, PDSO5
RoHS: Compliant		590 in Stock0 on Order
  • 590:$1.8400
  • 500:$1.9700
IPAN80R280P7XKSA1
DISTI # 2771317		Infineon Technologies AGMOSFET, N-CH, 800V, 17A, TO-220FP440
  • 100:£1.9500
  • 10:£2.2400
  • 1:£2.9800
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Disponibilidad
Valores:
20
En orden:
2003
Ingrese la cantidad:
El precio actual de IPAN80R280P7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,77 US$
2,77 US$
10
2,35 US$
23,50 US$
100
2,04 US$
204,00 US$
250
1,94 US$
485,00 US$
500
1,74 US$
870,00 US$
1000
1,46 US$
1 460,00 US$
2500
1,39 US$
3 475,00 US$
5000
1,34 US$
6 700,00 US$
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