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STH150N10F7-2

STH150N10F7-2
Mfr. #:
STH150N10F7-2
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 100 V, 0.0038 Ohm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STH150N10F7-2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
STH150N10F7-2 más información STH150N10F7-2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
H2PAK-2
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
110 A
Rds On - Resistencia de la fuente de drenaje:
3.9 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
117 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
250 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
STripFET
Embalaje:
Carrete
Serie:
STH150N10F7-2
Tipo de transistor:
1 N-Channel
Marca:
STMicroelectronics
Otoño:
33 ns
Tipo de producto:
MOSFET
Hora de levantarse:
57 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
72 ns
Tiempo típico de retardo de encendido:
33 ns
Unidad de peso:
0.139332 oz
Tags
STH15, STH1, STH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK STMicroelectronics STH150N10F7-2
***ure Electronics
N-Channel 100 V 0.0039 Ohm Surface Mount STripFET™ F7 Power Mosfet-H2PAK
***ical
Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) H2PAK T/R
***et Europe
Trans MOSFET N-CH 100V 110A 3-Pin H2PAK T/R
***ied Electronics & Automation
MOSFET N-Ch 100V 110A STripFET F7 H2PAK
***i-Key
MOSFET N-CH 100V 90A H2PAK-2
***ark
Ptd Low Voltage
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
STripFET™ F7 Power MOSFETs
STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STMicroelectronics STripFET VII Power MOSFETs
Parte # Mfg. Descripción Valores Precio
STH150N10F7-2
DISTI # 497-14979-1-ND		STMicroelectronicsMOSFET N-CH 100V 90A H2PAK-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		815In Stock
  • 500:$2.6164
  • 100:$3.1731
  • 10:$3.8160
  • 1:$4.2500
STH150N10F7-2
DISTI # 497-14979-6-ND		STMicroelectronicsMOSFET N-CH 100V 90A H2PAK-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		815In Stock
  • 500:$2.6164
  • 100:$3.1731
  • 10:$3.8160
  • 1:$4.2500
STH150N10F7-2
DISTI # 497-14979-2-ND		STMicroelectronicsMOSFET N-CH 100V 90A H2PAK-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.1798
STH150N10F7-2
DISTI # STH150N10F7-2		STMicroelectronicsTrans MOSFET N-CH 100V 110A 3-Pin H2PAK T/R - Tape and Reel (Alt: STH150N10F7-2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.7900
  • 2000:$1.7900
  • 4000:$1.6900
  • 6000:$1.5900
  • 10000:$1.5900
STH150N10F7-2
DISTI # STH150N10F7-2		STMicroelectronicsTrans MOSFET N-CH 100V 110A 3-Pin H2PAK T/R (Alt: STH150N10F7-2)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.6900
  • 2000:€1.3900
  • 4000:€1.2900
  • 6000:€1.1900
  • 10000:€1.0900
STH150N10F7-2
DISTI # 511-STH150N10F7-2		STMicroelectronicsMOSFET N-channel 100 V, 0.0038 Ohm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
RoHS: Compliant		895
  • 1:$3.3400
  • 10:$2.8400
  • 100:$2.4600
  • 250:$2.3400
  • 500:$2.1000
  • 1000:$1.7700
STH150N10F7-2STMicroelectronicsN-Channel 100 V 0.0039 Ohm Surface Mount STripFET F7 Power Mosfet-H2PAK
RoHS: Compliant		1000Reel
  • 1000:$1.6800
STH150N10F7-2
DISTI # 8607523P		STMicroelectronicsMOSFET N-CH 100V 110A STRIPFET F7 H2PAK, RL804
  • 20:£0.9400
STH150N10F7-2STMicroelectronicsINSTOCK1000
    STH150N10F7-2
    DISTI # XSFP00000065023    		STMicroelectronicsPower Field-Effect Transistor
    RoHS: Compliant    		1346
    • 1000:$3.3600
    • 1346:$3.0500
    Imagen Parte # Descripción
    INA198AIDBVR

    Mfr.#: INA198AIDBVR

    OMO.#: OMO-INA198AIDBVR

    		 Current & Power Monitors & Regulators Vltg Out Hi-Sd Msmnt Current Shunt Mntr
    UCC27710DR

    Mfr.#: UCC27710DR

    OMO.#: OMO-UCC27710DR

    		 Gate Drivers 700V GATE DRIVER- 0.5A/1A PEAK CURRENT
    SI8751AB-IS

    Mfr.#: SI8751AB-IS

    OMO.#: OMO-SI8751AB-IS

    		 Gate Drivers Isolated FET driver with digital input
    TPC13CAHM3/H

    Mfr.#: TPC13CAHM3/H

    OMO.#: OMO-TPC13CAHM3-H

    		 TVS Diodes / ESD Suppressors 1500W 12.4-13.7Vbr AEC-Q101 Qualified
    SQJ431EP-T1_GE3

    Mfr.#: SQJ431EP-T1_GE3

    OMO.#: OMO-SQJ431EP-T1-GE3-A9B

    		 MOSFET -200v -12A 83W AEC-Q101 Qualified
    FDB2532

    Mfr.#: FDB2532

    OMO.#: OMO-FDB2532

    		 MOSFET 150V N-Channel QFET Trench
    TPS76901HDBVT

    Mfr.#: TPS76901HDBVT

    OMO.#: OMO-TPS76901HDBVT

    		 LDO Voltage Regulators Ultra Low-Power 100-mA Low-Dropout Line
    MCW0612MC1009FP100

    Mfr.#: MCW0612MC1009FP100

    OMO.#: OMO-MCW0612MC1009FP100

    		 Thin Film Resistors - SMD 1watt 10ohms 1% 50ppm
    INA198AIDBVR

    Mfr.#: INA198AIDBVR

    OMO.#: OMO-INA198AIDBVR-TEXAS-INSTRUMENTS

    		 Current & Power Monitors & Regulators Vltg Out Hi-Sd Msmnt Current Shunt Mnt
    SI8751AB-IS

    Mfr.#: SI8751AB-IS

    OMO.#: OMO-SI8751AB-IS-SILICON-LABS

    		 DGTL ISO 2.5KV GATE DRIVER 8SOIC
    Disponibilidad
    Valores:
    760
    En orden:
    2743
    Ingrese la cantidad:
    El precio actual de STH150N10F7-2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,33 US$
    3,33 US$
    10
    2,83 US$
    28,30 US$
    100
    2,45 US$
    245,00 US$
    250
    2,33 US$
    582,50 US$
    500
    2,09 US$
    1 045,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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