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SI7491DP-T1-E3

SI7491DP-T1-E3
Mfr. #:
SI7491DP-T1-E3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 30V 18A 5.0W 8.5mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7491DP-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Tags
SI7491, SI749, SI74, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 30V 11A 8-Pin PowerPAK SO T/R
***ment14 APAC
MOSFET, P CH, -30V, -11A, SOIC-8
***i-Key
MOSFET P-CH 30V 11A PPAK SO-8
***
P-CH 30-V (D-S) MOSFET
***ser
P-Channel MOSFETs 30V
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-18000mA; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.013ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:1.8W ;RoHS Compliant: Yes
***nell
MOSFET, P CH, -30V, -11A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0105ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:1.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Parte # Mfg. Descripción Valores Precio
SI7491DP-T1-E3
DISTI # SI7491DP-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 30V 11A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI7491DP-T1-E3
    DISTI # SI7491DP-T1-E3CT-ND    		Vishay SiliconixMOSFET P-CH 30V 11A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI7491DP-T1-E3
      DISTI # SI7491DP-T1-E3DKR-ND      		Vishay SiliconixMOSFET P-CH 30V 11A PPAK SO-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI7491DP-T1-E3
        DISTI # 781-SI7491DP-E3        		Vishay IntertechnologiesMOSFET 30V 18A 5.0W 8.5mohm @ 10V
        RoHS: Compliant        		0
          Imagen Parte # Descripción
          SI7491DP-T1-E3

          Mfr.#: SI7491DP-T1-E3

          OMO.#: OMO-SI7491DP-T1-E3

          		 MOSFET RECOMMENDED ALT 78-SI7149ADP-T1-GE3
          SI7491DP-T1-E3

          Mfr.#: SI7491DP-T1-E3

          OMO.#: OMO-SI7491DP-T1-E3-VISHAY

          		 IGBT Transistors MOSFET 30V 18A 5.0W 8.5mohm @ 10V
          SI7491DPT1E3

          Mfr.#: SI7491DPT1E3

          OMO.#: OMO-SI7491DPT1E3-1190

          		 Nuevo y original
          SI7491DP-T1-GE3

          Mfr.#: SI7491DP-T1-GE3

          OMO.#: OMO-SI7491DP-T1-GE3-VISHAY

          		 MOSFET P-CH 30V 11A PPAK SO-8
          Disponibilidad
          Valores:
          Available
          En orden:
          1500
          Ingrese la cantidad:
          El precio actual de SI7491DP-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
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          Ext. Precio
          1
          0,00 US$
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          10
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          100
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          500
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          1000
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          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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