IRF7807TRPBF

Mfr. #:: IRF7807TRPBF
Fabricante:: Infineon / IR
Descripción:: MOSFET MOSFT 30V 8.3A 25mOhm 12nC
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IRF7807TRPBF Ficha de datos
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HTML Datasheet:: IRF7807TRPBF Datasheet IRF7807TRPBF Datasheet (P4-P6)IRF7807TRPBF Datasheet (P7-P8)
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Más información:: IRF7807TRPBF más información

Atributo del producto
Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: SO-8

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 30 V

Id - Corriente de drenaje continua:: 8.3 A

Rds On - Resistencia de la fuente de drenaje:: 25 mOhms

Vgs - Voltaje puerta-fuente:: 12 V

Qg - Carga de puerta:: 12 nC

Pd - Disipación de energía:: 2.5 W

Configuración:: Único

Embalaje:: Carrete

Altura:: 1.75 mm

Longitud:: 4.9 mm

Tipo de transistor:: 1 N-Channel

Ancho:: 3.9 mm

Marca:: Infineon / IR

Tipo de producto:: MOSFET

Cantidad de paquete de fábrica:: 4000

Subcategoría:: MOSFET

Parte # Alias:: SP001570502

Unidad de peso:: 0.019048 oz

Tags: IRF7807TRP, IRF7807T, IRF7807, IRF780, IRF78, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7807TRPBF Descripción

***Components: In a Pack of 20, N-Channel MOSFET, 8.3 A, 30 V, 8-Pin SOIC Infineon IRF7807TRPBF

***ark: Mosfet Transistor, N Channel, 8.3 A, 30 V, 25 Mohm, 4.5 V, 1 V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses

***ure Electronics: Single N-Channel 30 V 25 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***et: Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R

***et Europe: Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC

***ponent Sense: MOSFET N-CH 30V 8.3A 8-SOIC

***ied Electronics & Automation: MOSFET; 30V; 8.3A; 25 MOHM; 12 NC QG; SO-8

***ronik: N-CH 30V 8,3A 25mOhm SO-8 RoHSconf

***ukat: N-Ch 30V 8,3A 2,5W 0,025R SO8

***ment14 APAC: Prices include import duty and tax. MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:8.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:66A; Row Pitch:6.3mm; SMD Marking:IRF7807PBF; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***nell: MOSFET, N, LOGIC, SO-8; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:8.3A; Napięcie drenu / źródła Vds:30V; Rezystancja przewodzenia Rds(on):0.025ohm; Napięcie Vgs pomiaru Rds(on):4.5V; Napięcie progowe Vgs:1V; Straty mocy Pd:2.5W; Rodzaj obudowy tranzystora:SOIC; Liczba pinów:8piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Długość/wysokość zewnętrzna:1.75mm; Głębokość zewnętrzna:5.2mm; Liczba tranzystorów:1; Maks. prąd Id:8.3A; Napięcie Vds, typ.:30V; Napięcie Vgs pomiaru Rds on:4.5V; Napięcie Vgs, maks.:1V; Oznaczenie SMD:IRF7807PBF; Prąd impulsowy Idm:66A; Rozstaw rzędów:6.3mm; Szerokość zewnętrzna:4.05mm; Temperatura przy pełnej mocy znamionowej:25°C; Temperatura przy pomiarze prądu:25°C; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C

IRF7807TRPBF Más información

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IRF7807TRPBF DISTI # V72:2272_13890715	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R RoHS: Compliant	267	250:$0.5389 100:$0.5403 25:$0.6604 10:$0.6630 1:$0.7507
IRF7807TRPBF DISTI # IRF7807PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 8.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3432In Stock	1000:$0.4929 500:$0.6243 100:$0.8050 10:$1.0190 1:$1.1500
IRF7807TRPBF DISTI # IRF7807PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 8.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3432In Stock	1000:$0.4929 500:$0.6243 100:$0.8050 10:$1.0190 1:$1.1500
IRF7807TRPBF DISTI # IRF7807PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 8.3A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.4466
IRF7807TRPBF DISTI # 27177193	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R RoHS: Compliant	12000	4000:$0.3706
IRF7807TRPBF DISTI # 26196317	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R RoHS: Compliant	267	250:$0.5389 100:$0.5403 25:$0.6604 20:$0.6630
IRF7807TRPBF DISTI # SP001570502	Infineon Technologies AG	MOSFET, 30V, 8.3A, 25 MOHM, 12 NC QG, SO-8 (Alt: SP001570502) RoHS: Compliant Min Qty: 4000	Europe - 0	4000:€0.3329 8000:€0.3319 16000:€0.3309 24000:€0.3309 40000:€0.3299
IRF7807TRPBF-EL DISTI # IRF7807TRPBF-EL	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R (Alt: IRF7807TRPBF-EL) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0
IRF7807TRPBF-EL DISTI # IRF7807TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7807TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.3339 8000:$0.3219 16000:$0.3099 24000:$0.2999 40000:$0.2939
IRF7807TRPBF DISTI # 13AC9207	Infineon Technologies AG	MOSFET, N-CH, 30V, 8.3A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:8.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation RoHS Compliant: Yes	228	1:$0.9600 10:$0.8120 25:$0.7490 50:$0.6870 100:$0.6240 250:$0.5880 500:$0.5520 1000:$0.4350
IRF7807TRPBF DISTI # 70017540	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 17 Milliohms,ID 8.3A,SO-8,PD 2.5W,VGS +/-12V RoHS: Compliant	0	4000:$1.0370
IRF7807TRPBF DISTI # 942-IRF7807TRPBF	Infineon Technologies AG	MOSFET MOSFT 30V 8.3A 25mOhm 12nC RoHS: Compliant	2577	1:$0.9600 10:$0.8120 100:$0.6240 500:$0.5520 1000:$0.4350 4000:$0.3860
IRF7807TRPBF DISTI # 8273880P	Infineon Technologies AG	HEXFET MOSFET 8.3A 30V FOR DC-DC SOIC8, RL	1820	100:£0.4520 500:£0.4000 2000:£0.3150 4000:£0.2800
IRF7807TRPBF DISTI # IRF7807PBF-GURT	Infineon Technologies AG	N-Ch 30V 8,3A 2,5W 0,025R SO8 RoHS: Compliant	3250	50:€0.4070 100:€0.3470 500:€0.3170 2000:€0.3050
IRF7807TRPBF	International Rectifier	RoHS: Compliant	Europe - 4000
IRF7807TRPBF	International Rectifier	INSTOCK	3990
IRF7807TRPBF	48	INSTOCK	3990
IRF7807TRPBF DISTI # 2725916	Infineon Technologies AG	MOSFET, N-CH, 30V, 8.3A, SOIC RoHS: Compliant	233	5:£0.6350 25:£0.6200 100:£0.4570 250:£0.4310 500:£0.4040
IRF7807TRPBF DISTI # C1S322000486209	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R RoHS: Compliant	267	250:$0.5389 100:$0.5403 25:$0.6604 10:$0.6630
IRF7807TRPBF DISTI # C1S322000486193	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R RoHS: Compliant	12000	4000:$0.4280
IRF7807TRPBF DISTI # 2725916	Infineon Technologies AG	MOSFET, N-CH, 30V, 8.3A, SOIC RoHS: Compliant	228	1:$1.5300 10:$1.2900 100:$0.9870 500:$0.8740 1000:$0.6890 4000:$0.6530
IRF7807TRPBF DISTI # XSLY00000000847	INFINEON/IR	SO-8 RoHS: Compliant	4000	4000:$0.4900

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Disponibilidad

Valores:: Available
En orden:: 1988
Ingrese la cantidad:

El precio actual de IRF7807TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,95 US$~~; ~~0,95 US$~~

10: ~~0,81 US$~~; ~~8,12 US$~~

100: ~~0,62 US$~~; ~~62,40 US$~~

500: ~~0,55 US$~~; ~~276,00 US$~~

1000: ~~0,44 US$~~; ~~435,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IRF7807TRP 5
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IRF7807TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes