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IPB100N06S205ATMA4

IPB100N06S205ATMA4
Mfr. #:
IPB100N06S205ATMA4
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 55V 100A TO263-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB100N06S205ATMA4 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPB100N06S205ATMA4 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
IPB100N06S2-05 SP001067896
Paquete-Estuche
TO-263-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Polaridad del transistor
Canal N
Tags
IPB100N06S2, IPB100N06, IPB100N0, IPB100N, IPB100, IPB10, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 55 V 4.7 mOhm 130 nC OptiMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 55V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 55V 100A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 55V 100A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 55V 100A TO263-3
***ronik
N-CH 55V 100A 4,7mOhm TO263-3
***ark
MOSFET, AEC-Q101, N-CH, 55V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 55V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 55V, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:55V; Resistenza di Attivazione Rds(on):0.0037ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descripción Valores Precio
IPB100N06S205ATMA4
DISTI # 30746910		Infineon Technologies AGTrans MOSFET N-CH 55V 100A Automotive T/R3000
  • 1000:$1.1712
IPB100N06S205ATMA4
DISTI # 27506057		Infineon Technologies AGTrans MOSFET N-CH 55V 100A Automotive T/R1000
  • 1000:$1.7600
IPB100N06S205ATMA4
DISTI # IPB100N06S205ATMA4CT-ND		Infineon Technologies AGMOSFET N-CH 55V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1394In Stock
  • 500:$1.8814
  • 100:$2.4190
  • 10:$3.0100
  • 1:$3.3300
IPB100N06S205ATMA4
DISTI # IPB100N06S205ATMA4DKR-ND		Infineon Technologies AGMOSFET N-CH 55V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1394In Stock
  • 500:$1.8814
  • 100:$2.4190
  • 10:$3.0100
  • 1:$3.3300
IPB100N06S205ATMA4
DISTI # IPB100N06S205ATMA4TR-ND		Infineon Technologies AGMOSFET N-CH 55V 100A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$1.5135
IPB100N06S205ATMA4
DISTI # C1S322000611197		Infineon Technologies AGTrans MOSFET N-CH 55V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		7000
  • 1000:$1.4600
IPB100N06S205ATMA4
DISTI # 34AC1653		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes922
  • 1:$2.8000
  • 10:$2.3800
  • 25:$2.2200
  • 50:$2.0600
  • 100:$1.9000
  • 250:$1.7900
  • 500:$1.6700
IPB100N06S205ATMA4Infineon Technologies AGSingle N-Channel 55 V 4.7 mOhm 130 nC OptiMOS Power Mosfet - D2PAK
RoHS: Compliant		1000Reel
  • 1000:$1.3500
IPB100N06S205ATMA4
DISTI # 726-IPB100N06S205ATM		Infineon Technologies AGMOSFET N-CHANNEL_55/60V
RoHS: Compliant		1010
  • 1:$2.8000
  • 10:$2.3800
  • 100:$1.9000
  • 500:$1.6700
  • 1000:$1.3800
  • 2000:$1.2900
  • 5000:$1.2400
IPB100N06S205ATMA4Infineon Technologies AG 
RoHS: Not Compliant		9000
  • 1000:$1.1800
  • 500:$1.2500
  • 100:$1.3000
  • 25:$1.3500
  • 1:$1.4600
IPB100N06S205ATMA4
DISTI # XSFP00000140895		Infineon Technologies AG 
RoHS: Compliant		1346
  • 1000:$1.8000
  • 1346:$1.6900
IPB100N06S205ATMA4
DISTI # 2781066		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-263
RoHS: Compliant		922
  • 1:£2.8400
  • 10:£2.2800
  • 100:£1.8300
  • 250:£1.6300
  • 500:£1.4200
IPB100N06S205ATMA4
DISTI # 2781066		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-263
RoHS: Compliant		922
  • 1:$2.9300
  • 10:$2.7400
  • 100:$2.4200
  • 250:$2.2900
  • 500:$2.1700
  • 1000:$2.0600
Imagen Parte # Descripción
IPB100N06S205ATMA4

Mfr.#: IPB100N06S205ATMA4

OMO.#: OMO-IPB100N06S205ATMA4

 MOSFET N-CHANNEL_55/60V
IPB100N06S3-04

Mfr.#: IPB100N06S3-04

OMO.#: OMO-IPB100N06S3-04

 MOSFET N-Ch 55V 100A D2PAK-2
IPB100N06S3L-03

Mfr.#: IPB100N06S3L-03

OMO.#: OMO-IPB100N06S3L-03

 MOSFET N-Ch 55V 100A D2PAK-2
IPB100N06S205ATMA4

Mfr.#: IPB100N06S205ATMA4

OMO.#: OMO-IPB100N06S205ATMA4-INFINEON-TECHNOLOGIES

 MOSFET N-CH 55V 100A TO263-3
IPB100N06S2L05ATMA2

Mfr.#: IPB100N06S2L05ATMA2

OMO.#: OMO-IPB100N06S2L05ATMA2-INFINEON-TECHNOLOGIES

 MOSFET N-CH 55V 100A TO263-3
IPB100N06S2L-05

Mfr.#: IPB100N06S2L-05

OMO.#: OMO-IPB100N06S2L-05-1190

 Trans MOSFET N-CH 55V 100A 3-Pin(2+Tab) TO-263 (Alt: IPB100N06S2L-05)
IPB100N06S2L05ATMA1

Mfr.#: IPB100N06S2L05ATMA1

OMO.#: OMO-IPB100N06S2L05ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 55V 100A TO263-3
IPB100N06S3L-03

Mfr.#: IPB100N06S3L-03

OMO.#: OMO-IPB100N06S3L-03-INFINEON-TECHNOLOGIES

 MOSFET N-CH 55V 100A TO263-3-2
IPB100N06S3L-04

Mfr.#: IPB100N06S3L-04

OMO.#: OMO-IPB100N06S3L-04-INFINEON-TECHNOLOGIES

 MOSFET N-CH 55V 100A TO-263
IPB100N06S2-05

Mfr.#: IPB100N06S2-05

OMO.#: OMO-IPB100N06S2-05-317

 RF Bipolar Transistors MOSFET N-Ch 55V 100A D2PAK-2 OptiMOS
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de IPB100N06S205ATMA4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,76 US$
1,76 US$
10
1,67 US$
16,69 US$
100
1,58 US$
158,11 US$
500
1,49 US$
746,65 US$
1000
1,41 US$
1 405,40 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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