FDD044AN03L

FDD044AN03L
Mfr. #:
FDD044AN03L
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 30V N-Channel PowerTrench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDD044AN03L Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDD044AN03L DatasheetFDD044AN03L Datasheet (P4-P6)FDD044AN03L Datasheet (P7-P9)FDD044AN03L Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
35 A
Rds On - Resistencia de la fuente de drenaje:
3.9 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
160 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
2.39 mm
Longitud:
6.73 mm
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
6.22 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
63 ns
Tipo de producto:
MOSFET
Hora de levantarse:
154 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
42 ns
Tiempo típico de retardo de encendido:
20 ns
Unidad de peso:
0.139332 oz
Tags
FDD0, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
N-Channel 30V 21A (Ta), 35A (Tc) 160W (Tc) Surface Mount TO-252AA - Bulk
***i-Key Marketplace
MOSFET N-CH 30V 21A/35A TO252AA
*** Services
CoC and 2-years warranty / RFQ for pricing
***ser
MOSFETs 30V N-Channel PowerTrench
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:35A; On Resistance, Rds(on):3.9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252AA ;RoHS Compliant: Yes
***emi
N-Channel PowerTrench® SyncFET™ 30V, 42A, 3mΩ
***r Electronics
Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ical
Trans MOSFET N-CH 30V 24.3A 8-Pin PowerPAK SO EP T/R
***ure Electronics
N-CH POWERPAK SO-8 BWL 20V 4.7MOHM@10V- LEAD(PB) AND HALOGEN FREE
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET,N CH,30V,40A,POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:24.3A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 4.0mΩ
***ment14 APAC
N CHANNEL MOSFET, 25V, 35A TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Source Voltage Vds:25V; On Resistance
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
***(Formerly Allied Electronics)
IRLR7807ZTRPBF N-channel MOSFET Transistor; 43 A; 30 V; 3+Tab-Pin DPAK
***ure Electronics
Single N-Channel 30V 13.8 mOhm 7 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***nell
MOSFET, N-CH, 30V, 43A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Po
***roFlash
Trans MOSFET N-CH 30V 13.1A Automotive 3-Pin(2+Tab) DPAK T/R
***ark
Mosfet, N-Ch, 30V, 43A, To-252 Rohs Compliant: Yes
***ure Electronics
N-Channel 30V 13.1A (Ta), 43A (Tc) 1.6W (Ta) Surface Mount TO-252-3
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Parte # Mfg. Descripción Valores Precio
FDD044AN03L
DISTI # FDD044AN03L-ND
ON SemiconductorMOSFET N-CH 30V 35A D-PAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    FDD044AN03L
    DISTI # 512-FDD044AN03L
    ON SemiconductorMOSFET 30V N-Channel PowerTrench
    RoHS: Compliant
    0
      FDD044AN03LFairchild Semiconductor CorporationPower Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant
      4060
      • 1000:$0.9000
      • 500:$0.9400
      • 100:$0.9800
      • 25:$1.0200
      • 1:$1.1000
      Imagen Parte # Descripción
      FDD044AN03L

      Mfr.#: FDD044AN03L

      OMO.#: OMO-FDD044AN03L

      MOSFET 30V N-Channel PowerTrench
      FDD044AN03L

      Mfr.#: FDD044AN03L

      OMO.#: OMO-FDD044AN03L-ON-SEMICONDUCTOR

      MOSFET N-CH 30V 35A D-PAK
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de FDD044AN03L es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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