IPS65R950C6AKMA1

IPS65R950C6AKMA1
Mfr. #:
IPS65R950C6AKMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 700V 4.5A IPAK-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPS65R950C6AKMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
4.5 A
Rds On - Resistencia de la fuente de drenaje:
855 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
15.3 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
37 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
6.22 mm
Longitud:
6.73 mm
Serie:
CoolMOS C6
Tipo de transistor:
1 N-Channel
Ancho:
2.38 mm
Marca:
Infineon Technologies
Otoño:
13.6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5.2 ns
Cantidad de paquete de fábrica:
1500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
41 ns
Tiempo típico de retardo de encendido:
6.6 ns
Parte # Alias:
IPS65R950C6AKMA1 SP000991122
Unidad de peso:
0.012102 oz
Tags
IPS65R, IPS65, IPS6, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 4.5A 3-Pin(3+Tab) TO-251 Tube
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CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO251-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
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Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
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Mosfet, N-Ch, 650V, 5.5A, 150Deg C; Transistor Polarity:n Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.71Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
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Parte # Mfg. Descripción Valores Precio
IPS65R950C6AKMA1
DISTI # IPS65R950C6AKMA1-ND
Infineon Technologies AGMOSFET N-CH 650V 4.5A TO-251
RoHS: Compliant
Min Qty: 1
Container: Tube
150In Stock
  • 100:$0.8110
  • 25:$0.9872
  • 10:$1.0400
  • 1:$1.1600
IPS65R950C6AKMA1
DISTI # IPS65R950C6AKMA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Bulk (Alt: IPS65R950C6AKMA1)
Min Qty: 715
Container: Bulk
Americas - 0
  • 7150:$0.4439
  • 3575:$0.4519
  • 2145:$0.4679
  • 1430:$0.4859
  • 715:$0.5039
IPS65R950C6
DISTI # 726-IPS65R950C6
Infineon Technologies AGMOSFET N-Ch 700V 4.5A IPAK-3
RoHS: Compliant
1465
  • 1:$1.1100
  • 10:$0.9410
  • 100:$0.7220
  • 500:$0.6390
  • 1000:$0.5040
IPS65R950C6AKMA1
DISTI # 726-IPS65R950C6AKMA1
Infineon Technologies AGMOSFET N-Ch 700V 4.5A IPAK-3
RoHS: Compliant
0
    IPS65R950C6AKMA1Infineon Technologies AGPower Bipolar Transistor
    RoHS: Compliant
    35
    • 1000:$0.4600
    • 500:$0.4900
    • 100:$0.5100
    • 25:$0.5300
    • 1:$0.5700
    Imagen Parte # Descripción
    IPS65R950C6AKMA1

    Mfr.#: IPS65R950C6AKMA1

    OMO.#: OMO-IPS65R950C6AKMA1

    MOSFET N-Ch 700V 4.5A IPAK-3
    IPS65R950C6

    Mfr.#: IPS65R950C6

    OMO.#: OMO-IPS65R950C6-1190

    Trans MOSFET N-CH 700V 4.5A 3-Pin(3+Tab) TO-251
    IPS65R950C6AKMA1

    Mfr.#: IPS65R950C6AKMA1

    OMO.#: OMO-IPS65R950C6AKMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 650V 4.5A TO-251
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
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