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SQJ860EP-T1_GE3

SQJ860EP-T1_GE3
Mfr. #:
SQJ860EP-T1_GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 40V Vds 60A Id AEC-Q101 Qualified
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SQJ860EP-T1_GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ860EP-T1_GE3 DatasheetSQJ860EP-T1_GE3 Datasheet (P4-P6)SQJ860EP-T1_GE3 Datasheet (P7)
ECAD Model:
Más información:
SQJ860EP-T1_GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8L-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
60 A
Rds On - Resistencia de la fuente de drenaje:
5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
55 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
48 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.04 mm
Longitud:
6.15 mm
Serie:
SQ
Tipo de transistor:
1 N-Channel
Ancho:
5.13 mm
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
78 S
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
30 ns
Tiempo típico de retardo de encendido:
10 ns
Unidad de peso:
0.017870 oz
Tags
SQJ86, SQJ8, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
MOSFET N-Channel Automotive 40V 60A 4-Pin PowerPAK SO T/R
***ical
Trans MOSFET N-CH 40V 60A Automotive 8-Pin PowerPAK SO EP
***i-Key
MOSFET N-CH 40V 60A POWERPAKSO-8
***ark
MOSFET, AEC-Q101, N-CH, 40V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 40V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:48W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, AEC-Q101, N-CH, 40V, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.005ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:48W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Parte # Mfg. Descripción Valores Precio
SQJ860EP-T1_GE3
DISTI # V72:2272_17600272		Vishay IntertechnologiesSQJ860EP-T1_GE3**MULT1
9172
3106999		2922
  • 75000:$0.2952
  • 30000:$0.3021
  • 15000:$0.3090
  • 6000:$0.3159
  • 3000:$0.3227
  • 1000:$0.3297
  • 500:$0.4422
  • 250:$0.4804
  • 100:$0.5336
  • 50:$0.5679
  • 25:$0.6311
  • 10:$0.7714
  • 1:$0.9554
SQJ860EP-T1_GE3
DISTI # SQJ860EP-T1_GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11132In Stock
  • 1000:$0.3841
  • 500:$0.4802
  • 100:$0.6074
  • 10:$0.7920
  • 1:$0.9000
SQJ860EP-T1_GE3
DISTI # SQJ860EP-T1_GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11132In Stock
  • 1000:$0.3841
  • 500:$0.4802
  • 100:$0.6074
  • 10:$0.7920
  • 1:$0.9000
SQJ860EP-T1_GE3
DISTI # SQJ860EP-T1_GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 30000:$0.2953
  • 15000:$0.3030
  • 6000:$0.3147
  • 3000:$0.3380
SQJ860EP-T1_GE3
DISTI # 30287429		Vishay IntertechnologiesSQJ860EP-T1_GE3**MULT1
9172
3106999		2922
  • 23:$0.9554
SQJ860EP-T1_GE3
DISTI # SQJ860EP-T1_GE3		Vishay IntertechnologiesMOSFET N-Channel Automotive 40V 60A 4-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ860EP-T1_GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2839
  • 18000:$0.2919
  • 12000:$0.2999
  • 6000:$0.3129
  • 3000:$0.3229
SQJ860EP-T1_GE3
DISTI # SQJ860EP-T1_GE3		Vishay IntertechnologiesMOSFET N-Channel Automotive 40V 60A 4-Pin PowerPAK SO T/R (Alt: SQJ860EP-T1_GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€0.3779
  • 500:€0.3849
  • 100:€0.3909
  • 50:€0.4059
  • 25:€0.4399
  • 10:€0.5109
  • 1:€0.7499
SQJ860EP-T1_GE3
DISTI # 20AC4040		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) 175C MOSFET0
  • 50000:$0.2870
  • 30000:$0.3000
  • 20000:$0.3220
  • 10000:$0.3450
  • 5000:$0.3730
  • 1:$0.3820
SQJ860EP-T1_GE3
DISTI # 78-SQJ860EP-T1_GE3		Vishay IntertechnologiesMOSFET 40V Vds 60A Id AEC-Q101 Qualified
RoHS: Compliant		12728
  • 1:$0.8800
  • 10:$0.7080
  • 100:$0.5370
  • 500:$0.4440
  • 1000:$0.3550
  • 3000:$0.3210
  • 6000:$0.2990
  • 9000:$0.2880
  • 24000:$0.2770
SQJ860EP-T1_GE3
DISTI # 2708311		Vishay IntertechnologiesMOSFET, AEC-Q101, N-CH, 40V, POWERPAK SO
RoHS: Compliant		1482
  • 1000:$0.5790
  • 500:$0.7240
  • 100:$0.9160
  • 10:$1.2000
  • 1:$1.3600
SQJ860EP-T1_GE3
DISTI # 2708311		Vishay IntertechnologiesMOSFET, AEC-Q101, N-CH, 40V, POWERPAK SO1582
  • 500:£0.3580
  • 250:£0.3960
  • 100:£0.4330
  • 25:£0.5700
  • 5:£0.6380
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Mfr.#: INN3168C-H101-TL

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Disponibilidad
Valores:
12
En orden:
1995
Ingrese la cantidad:
El precio actual de SQJ860EP-T1_GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,88 US$
0,88 US$
10
0,71 US$
7,08 US$
100
0,54 US$
53,70 US$
500
0,44 US$
222,00 US$
1000
0,36 US$
355,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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