APTGT300A60G

APTGT300A60G
Mfr. #:
APTGT300A60G
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Modules DOR CC6153
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APTGT300A60G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APTGT300A60G DatasheetAPTGT300A60G Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Módulos IGBT
RoHS:
Y
Producto:
Módulos de silicio IGBT
Configuración:
Doble
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.4 V
Corriente continua del colector a 25 C:
430 A
Corriente de fuga puerta-emisor:
500 nA
Pd - Disipación de energía:
1.15 kW
Paquete / Caja:
SP6
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 100 C
Embalaje:
Tubo
Marca:
Microchip / Microsemi
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Unidad de peso:
3.880136 oz
Tags
APTGT300A6, APTGT300A, APTGT300, APTGT30, APTGT3, APTGT, APTG, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel
***et
Trans IGBT Module N-CH 600V 430A 7-Pin Case SP6
***rochip SCT
High Voltage Power Module, Phase leg, 600V, RoHS
***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***i-Key
IGBT MODULE TRENCH PHASE LEG SP6
***ical
Trans IGBT Module N-CH 600V 430A 1150000mW 12-Pin Case SP-6 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Full bridge, 600V, RoHS
***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***i-Key
IGBT MOD TRENCH FULL BRIDGE SP6
*** Electronic Components
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***eco
600V 400A LOW SATURATION IGBT MODULE
*** International
IGBT POWER MOD 600V 300A 7PM-IA
***ure Electronics
APTGT450x Series 600 V 550 A Trench + Field Stop IGBT Power Module - SP6
*** Stop Electro
Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel
***ical
Trans IGBT Module N-CH 600V 550A 1750000mW 7-Pin Case SP-6 Tube
***rochip SCT
High Voltage Power Module, Phase leg, 600V, RoHS
***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
POWER MOD IGBT TRENCH PH LEG SP6
***et Europe
Trans IGBT Module N-CH 600V 300A nom 1250W 7-Pin 106.4x61.4mm
***nsix Microsemi
Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Modules 600V 300A DUAL
***omponent
Infineon power module
***el Nordic
Contact for details
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers Molding Type Module
***el Electronic
Trans IGBT Module N-CH 600V 400A 8-Pin PM-IA
***DA Technology Co., Ltd.
Product Description Demo for Development.
***omponent
Fairchild Semiconductor power module
***ical
Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray
***ark
Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes
***ineon
EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon
Imagen Parte # Descripción
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Mfr.#: APTGT30X60T3G

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APTGT300DA60G

Mfr.#: APTGT300DA60G

OMO.#: OMO-APTGT300DA60G

IGBT Modules CC6196
APTGT300DA120G

Mfr.#: APTGT300DA120G

OMO.#: OMO-APTGT300DA120G

IGBT Modules CC6187
APTGT300A120G

Mfr.#: APTGT300A120G

OMO.#: OMO-APTGT300A120G

IGBT Modules CC6106
APTGT300DA120D3G

Mfr.#: APTGT300DA120D3G

OMO.#: OMO-APTGT300DA120D3G

IGBT Modules Power Module - IGBT
APTGT35X120T3G

Mfr.#: APTGT35X120T3G

OMO.#: OMO-APTGT35X120T3G-MICROSEMI

Trans IGBT Module N-CH 1.2KV 55A 32-Pin Case SP-3
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de APTGT300A60G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
100
140,76 US$
14 076,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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