OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IPB60R600CP

IPB60R600CP
Mfr. #:
IPB60R600CP
Fabricante:
Rochester Electronics, LLC
Descripción:
IGBT Transistors MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB60R600CP Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET - Single
Serie
CoolMOS CP
embalaje
Carrete
Alias ​​de parte
IPB60R600CPATMA1 SP000405892
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Nombre comercial
CoolMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
60 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
17 ns
Hora de levantarse
12 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
6.1 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V
Resistencia a la fuente de desagüe de Rds
600 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
75 ns
Tiempo de retardo de encendido típico
17 ns
Qg-Gate-Charge
21 nC
Modo de canal
Mejora
Tags
IPB60R600C, IPB60R6, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650V 6.1A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 600V 6.1A TO263
***ark
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:6.1A; On State Resistance:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:650V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.1A; Package / Case:TO-263; Power Dissipation Pd:60W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6.1A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.54ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:6.1A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:650V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:Power MOSFET
Parte # Mfg. Descripción Valores Precio
IPB60R600CPATMA1
DISTI # IPB60R600CPATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 6.1A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB60R600CPATMA1
    DISTI # IPB60R600CPATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 6.1A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB60R600CPATMA1
      DISTI # IPB60R600CPATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V 6.1A TO263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB60R600CPInfineon Technologies AGPower Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant        		6970
        • 1000:$0.7100
        • 500:$0.7400
        • 100:$0.7700
        • 25:$0.8100
        • 1:$0.8700
        IPB60R600CP
        DISTI # 726-IPB60R600CP        		Infineon Technologies AGMOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP
        RoHS: Compliant        		874
        • 1:$2.0800
        • 10:$1.6100
        • 100:$1.4600
        • 250:$1.3100
        • 500:$1.1300
        • 1000:$0.9540
        • 2000:$0.7930
        • 5000:$0.7750
        • 10000:$0.7460
        Imagen Parte # Descripción
        IPB60R299CPAATMA1

        Mfr.#: IPB60R299CPAATMA1

        OMO.#: OMO-IPB60R299CPAATMA1

        		 MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA
        IPB60R199CP

        Mfr.#: IPB60R199CP

        OMO.#: OMO-IPB60R199CP

        		 MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP
        IPB60R280CFD7ATMA1

        Mfr.#: IPB60R280CFD7ATMA1

        OMO.#: OMO-IPB60R280CFD7ATMA1

        		 MOSFET
        IPB60R210CFD7ATMA1

        Mfr.#: IPB60R210CFD7ATMA1

        OMO.#: OMO-IPB60R210CFD7ATMA1

        		 MOSFET
        IPB60R199CPA

        Mfr.#: IPB60R199CPA

        OMO.#: OMO-IPB60R199CPA

        		 MOSFET N-Ch 600V 16A D2PAK-2 CoolMOS CPA
        IPB60R190C6 6R190C6

        Mfr.#: IPB60R190C6 6R190C6

        OMO.#: OMO-IPB60R190C6-6R190C6-1190

        		 Nuevo y original
        IPB600N25N3 G

        Mfr.#: IPB600N25N3 G

        OMO.#: OMO-IPB600N25N3-G-1190

        		 Trans MOSFET N-CH 250V 25A 3-Pin TO-263 T/R (Alt: IPB600N25N3 G)
        IPB60R125C6ATMA1

        Mfr.#: IPB60R125C6ATMA1

        OMO.#: OMO-IPB60R125C6ATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 600V 30A TO263
        IPB60R380C6 .

        Mfr.#: IPB60R380C6 .

        OMO.#: OMO-IPB60R380C6--1190

        		 Nuevo y original
        IPB60R380C6S

        Mfr.#: IPB60R380C6S

        OMO.#: OMO-IPB60R380C6S-1190

        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        3500
        Ingrese la cantidad:
        El precio actual de IPB60R600CP es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,06 US$
        1,06 US$
        10
        1,01 US$
        10,12 US$
        100
        0,96 US$
        95,85 US$
        500
        0,91 US$
        452,65 US$
        1000
        0,85 US$
        852,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
        Empezar con
        Nuevos productos
        More Newest Products
        Top