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SI4431BDY-T1-GE3

SI4431BDY-T1-GE3
Mfr. #:
SI4431BDY-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET P-CH 30V 5.7A 8SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4431BDY-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI4431BDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI4431BDY-GE3
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOIC-Narrow-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 P-Channel
Disipación de potencia Pd
1.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
10 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
5.7 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Resistencia a la fuente de desagüe de Rds
30 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
70 ns
Tiempo de retardo de encendido típico
10 ns
Modo de canal
Mejora
Tags
SI4431BDY-T, SI4431BD, SI4431B, SI4431, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans Mosfet P-ch 30V 5.7A 8-PIN SOIC N T/r
*** Source Electronics
MOSFET P-CH 30V 5.7A 8SOIC
***
P-CHANNEL 30-V (D-S) MOSFET
***ure Electronics
30V 0.03 Ohm P-ch SOIC-8
***i-Key
MOSFET P-CH 30V 5.7A 8SO
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.5W
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4431BDY-T1-GE3
DISTI # SI4431BDY-T1-GE3-ND		Vishay SiliconixMOSFET P-CH 30V 5.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.4928
SI4431BDY-T1-GE3
DISTI # SI4431BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.4249
  • 5000:$0.4119
  • 10000:$0.3949
  • 15000:$0.3839
  • 25000:$0.3739
SI4431BDY-T1-GE3
DISTI # 15R5014		Vishay IntertechnologiesP CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):23mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:1.5W , RoHS Compliant: Yes0
  • 1:$0.4390
  • 2500:$0.4360
  • 5000:$0.4230
  • 10000:$0.4070
SI4431BDY-T1-GE3
DISTI # 84R8048		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):23mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:1.5W , RoHS Compliant: Yes0
  • 1:$0.9200
  • 10:$0.7580
  • 25:$0.6990
  • 50:$0.6410
  • 100:$0.5820
  • 250:$0.5410
  • 500:$0.5000
SI4431BDY-T1-GE3
DISTI # 781-SI4431BDY-GE3		Vishay IntertechnologiesMOSFET 30V 7.5A 2.5W 30mohm @ 10V
RoHS: Compliant		1970
  • 1:$0.9200
  • 10:$0.7580
  • 100:$0.5820
  • 500:$0.5000
  • 1000:$0.3950
  • 2500:$0.3690
SI4431BDY-T1-GE3
DISTI # 1868999		Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant		0
  • 2500:$1.8400
SI4431BDY-T1-GE3
DISTI # 1868999		Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant		0
  • 2500:£0.8190
Imagen Parte # Descripción
SI4431BDY-T1-E3

Mfr.#: SI4431BDY-T1-E3

OMO.#: OMO-SI4431BDY-T1-E3

 MOSFET 30V (D-S) 7.5A
SI4431BDY-T1-GE3

Mfr.#: SI4431BDY-T1-GE3

OMO.#: OMO-SI4431BDY-T1-GE3

 MOSFET 30V 7.5A 2.5W 30mohm @ 10V
SI4431BDY-T1-E3-CUT TAPE

Mfr.#: SI4431BDY-T1-E3-CUT TAPE

OMO.#: OMO-SI4431BDY-T1-E3-CUT-TAPE-1190

 Nuevo y original
SI4431BDY

Mfr.#: SI4431BDY

OMO.#: OMO-SI4431BDY-1190

 MOSFET Transistor, P-Channel, SO
SI4431BDY-T1-E3

Mfr.#: SI4431BDY-T1-E3

OMO.#: OMO-SI4431BDY-T1-E3-VISHAY

 MOSFET P-CH 30V 5.7A 8-SOIC
SI4431BDY-T1-E3 GE3

Mfr.#: SI4431BDY-T1-E3 GE3

OMO.#: OMO-SI4431BDY-T1-E3-GE3-1190

 Nuevo y original
SI4431BDY-T1-E3-S

Mfr.#: SI4431BDY-T1-E3-S

OMO.#: OMO-SI4431BDY-T1-E3-S-1190

 Nuevo y original
SI4431BDY-T1-E3CT

Mfr.#: SI4431BDY-T1-E3CT

OMO.#: OMO-SI4431BDY-T1-E3CT-1190

 Nuevo y original
SI4431BDY-T1-GE3

Mfr.#: SI4431BDY-T1-GE3

OMO.#: OMO-SI4431BDY-T1-GE3-VISHAY

 MOSFET P-CH 30V 5.7A 8SOIC
SI4431BDYT1E3

Mfr.#: SI4431BDYT1E3

OMO.#: OMO-SI4431BDYT1E3-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de SI4431BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,55 US$
0,55 US$
10
0,53 US$
5,26 US$
100
0,50 US$
49,82 US$
500
0,47 US$
235,25 US$
1000
0,44 US$
442,80 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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