SISH106DN-T1-GE3

SISH106DN-T1-GE3
Mfr. #:
SISH106DN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 20V Vds; +/-12V Vgs PowerPAK 1212-8SH
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISH106DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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HTML Datasheet:
SISH106DN-T1-GE3 DatasheetSISH106DN-T1-GE3 Datasheet (P4-P6)SISH106DN-T1-GE3 Datasheet (P7)
ECAD Model:
Más información:
SISH106DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK1212-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
19.5 A
Rds On - Resistencia de la fuente de drenaje:
6.2 mOhms
Vgs th - Voltaje umbral puerta-fuente:
600 mV
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
27 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
3.8 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SIS
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
105 S
Otoño:
12 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
50 ns
Tiempo típico de retardo de encendido:
25 ns
Tags
SISH10, SISH1, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SISH106DN-T1-GE3
DISTI # V99:2348_22587809
Vishay IntertechnologiesN-Channel 20 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , m @ 10V m @ 7.5V 6.2 m @ 4.5V6000
  • 3000:$0.6717
  • 1000:$0.7427
  • 500:$0.9397
  • 100:$1.0734
  • 10:$1.4187
  • 1:$1.8935
SISH106DN-T1-GE3
DISTI # SISH106DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CHAN PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5990In Stock
  • 1000:$0.7778
  • 500:$0.9387
  • 100:$1.1426
  • 10:$1.4220
  • 1:$1.5800
SISH106DN-T1-GE3
DISTI # SISH106DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CHAN PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5990In Stock
  • 1000:$0.7778
  • 500:$0.9387
  • 100:$1.1426
  • 10:$1.4220
  • 1:$1.5800
SISH106DN-T1-GE3
DISTI # SISH106DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CHAN PPAK 1212-8SH
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 6000:$0.6944
  • 3000:$0.7291
SISH106DN-T1-GE3
DISTI # 30744705
Vishay IntertechnologiesN-Channel 20 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , m @ 10V m @ 7.5V 6.2 m @ 4.5V6000
  • 3000:$0.7221
  • 1000:$0.7984
  • 500:$1.0102
  • 100:$1.1539
  • 10:$1.5251
SISH106DN-T1-GE3
DISTI # SISH106DN-T1-GE3
Vishay IntertechnologiesN-CH 20-V (D-S) FAST SWITCHING MOSFE - Tape and Reel (Alt: SISH106DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.6349
  • 30000:$0.6529
  • 18000:$0.6719
  • 12000:$0.6999
  • 6000:$0.7209
SISH106DN-T1-GE3
DISTI # 81AC3491
Vishay IntertechnologiesN-CH 20-V (D-S) FAST SWITCHING MOSFE0
  • 10000:$0.6300
  • 6000:$0.6450
  • 4000:$0.6700
  • 2000:$0.7440
  • 1000:$0.8190
  • 1:$0.8540
SISH106DN-T1-GE3
DISTI # 99AC9579
Vishay IntertechnologiesMOSFET, N-CH, 20V, 12.5A, 150DEG C, 1.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:12.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0051ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V,RoHS Compliant: Yes25
  • 500:$0.9520
  • 250:$1.0300
  • 100:$1.1100
  • 50:$1.2200
  • 25:$1.3300
  • 10:$1.4400
  • 1:$1.7600
SISH106DN-T1-GE3
DISTI # 78-SISH106DN-T1-GE3
Vishay IntertechnologiesMOSFET 20V Vds,+/-12V Vgs PowerPAK 1212-8SH
RoHS: Compliant
5890
  • 1:$1.7300
  • 10:$1.4200
  • 100:$1.0900
  • 500:$0.9420
  • 1000:$0.7430
  • 3000:$0.6940
  • 6000:$0.6590
  • 9000:$0.6340
SISH106DN-T1-GE3
DISTI # 3019125
Vishay IntertechnologiesMOSFET, N-CH, 20V, 12.5A, 150DEG C, 1.5W
RoHS: Compliant
25
  • 5000:$0.9520
  • 1000:$0.9850
  • 500:$1.2200
  • 250:$1.3400
  • 100:$1.4500
  • 25:$1.8600
  • 5:$2.0700
SISH106DN-T1-GE3
DISTI # 3019125
Vishay IntertechnologiesMOSFET, N-CH, 20V, 12.5A, 150DEG C, 1.5W25
  • 500:£0.6910
  • 250:£0.7480
  • 100:£0.8060
  • 25:£1.0500
  • 5:£1.1500
Imagen Parte # Descripción
FFSM0665A

Mfr.#: FFSM0665A

OMO.#: OMO-FFSM0665A

Schottky Diodes & Rectifiers 650V 6A SIC SBD
68611614122

Mfr.#: 68611614122

OMO.#: OMO-68611614122

FFC & FPC Connectors WR-FPC 1.0mm ZIF 16P Top Contact
SMDTF02330QA00KQ00

Mfr.#: SMDTF02330QA00KQ00

OMO.#: OMO-SMDTF02330QA00KQ00-800

Film Capacitors 250V .033uF 10% MAX REFLOW 230C
FFSM0665A

Mfr.#: FFSM0665A

OMO.#: OMO-FFSM0665A-ON-SEMICONDUCTOR

Silicon Carbide Schottky Diode
68612014122

Mfr.#: 68612014122

OMO.#: OMO-68612014122-WURTH-ELECTRONICS

WR-FPC 1.00MM ZIF CONNECTOR TOP 20PIN, RL
Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de SISH106DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,73 US$
1,73 US$
10
1,42 US$
14,20 US$
100
1,09 US$
109,00 US$
500
0,94 US$
471,00 US$
1000
0,74 US$
743,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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