RFD20N03SM

RFD20N03SM
Mfr. #:
RFD20N03SM
Fabricante:
Rochester Electronics, LLC
Descripción:
Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RFD20N03SM Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
RFD20N03S, RFD20, RFD2, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
RFD20N03SM9A
DISTI # 512-RFD20N03SM9A
ON SemiconductorMOSFET 30V Single
RoHS: Not compliant
0
    RFD20N03SM9AFairchild Semiconductor CorporationPower Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Not Compliant
    4911
    • 1000:$0.7800
    • 500:$0.8200
    • 100:$0.8500
    • 25:$0.8900
    • 1:$0.9600
    RFD20N03SM9AR4770Fairchild Semiconductor Corporation 
    RoHS: Not Compliant
    1578
    • 1000:$0.7800
    • 500:$0.8200
    • 100:$0.8500
    • 25:$0.8900
    • 1:$0.9600
    RFD20N03SMHarris SemiconductorPower Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Not Compliant
    8441
    • 1000:$0.3800
    • 500:$0.4000
    • 100:$0.4200
    • 25:$0.4400
    • 1:$0.4700
    RFD20N03SM9AHarris SemiconductorPower Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Not Compliant
    2500
    • 1000:$0.4000
    • 500:$0.4200
    • 100:$0.4300
    • 25:$0.4500
    • 1:$0.4900
    RFD20N03SM9AR4761Harris Semiconductor 
    RoHS: Not Compliant
    2500
    • 1000:$0.4000
    • 500:$0.4200
    • 100:$0.4300
    • 25:$0.4500
    • 1:$0.4900
    Imagen Parte # Descripción
    RFD20N03

    Mfr.#: RFD20N03

    OMO.#: OMO-RFD20N03-1190

    Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RFD20N03SM

    Mfr.#: RFD20N03SM

    OMO.#: OMO-RFD20N03SM-1190

    Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RFD20N03SM9A

    Mfr.#: RFD20N03SM9A

    OMO.#: OMO-RFD20N03SM9A-1190

    MOSFET 30V Single
    RFD20N03SM9AR4770

    Mfr.#: RFD20N03SM9AR4770

    OMO.#: OMO-RFD20N03SM9AR4770-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de RFD20N03SM es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,57 US$
    0,57 US$
    10
    0,54 US$
    5,42 US$
    100
    0,51 US$
    51,30 US$
    500
    0,48 US$
    242,25 US$
    1000
    0,46 US$
    456,00 US$
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