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IDH10G120C5XKSA1

IDH10G120C5XKSA1
Mfr. #:
IDH10G120C5XKSA1
Fabricante:
Infineon Technologies
Descripción:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IDH10G120C5XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IDH10G120C5XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Diodos, rectificadores - simple
Serie
thinQ!
Producto
Diodos de carburo de silicio Schottky
embalaje
Tubo
Alias ​​de parte
IDH10G120C5 SP001079722
Unidad de peso
0.211644 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-220-2
Tecnología
Sic
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
PG-TO220-2-1
Configuración
Único
Velocidad
Fast Recovery = 200mA (Io)
Tipo de diodo
Carburo de silicio Schottky
Corriente-fuga-inversa-Vr
62μA @ 1200V
Voltaje-Forward-Vf-Max-If
1.8V @ 10A
Voltaje-DC-Reverse-Vr-Max
1200V (1.2kV)
Actual-Promedio-Rectificado-Io
10A (DC)
Tiempo de recuperación inverso trr
-
Capacitancia-Vr-F
525pF @ 1V, 1MHz
Unión de temperatura de funcionamiento
-55°C ~ 175°C
Disipación de potencia Pd
165 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Vf-Tensión directa
1.5 V
Vr-Tensión inversa
1.2 kV
Ir-Corriente inversa
4 uA
If-Forward-Current
10 A
Vrrm-Tensión-inversa-repetitiva
1.2 kV
Ifsm-Forward-Surge-Current
99 A
Tags
IDH10G, IDH10, IDH1, IDH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDH10G120C5 Series 1200 V 10 A 5th Generation ThinQ!™SiC Schottky Diode-TO-220-2
***ical
Diode Schottky SiC 1.2KV 31.9A 2-Pin(2+Tab) TO-220 Tube
***ark
Sic Schottky Diode, 1.2Kv, 31.9A, To-220; Product Range:thinq Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:31.9A; Total Capacitive Charge Qc:41Nc; Diode Case Rohs Compliant: Yes
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Parte # Mfg. Descripción Valores Precio
IDH10G120C5XKSA1
DISTI # V99:2348_09156848		Infineon Technologies AGDiode Schottky 1.2KV 31.9A 2-Pin(2+Tab) TO-220 Tube390
  • 2500:$4.5280
  • 1000:$4.6940
  • 500:$5.2220
  • 250:$5.7450
  • 100:$6.0540
  • 25:$6.9540
  • 10:$7.3290
  • 1:$8.0990
IDH10G120C5XKSA1
DISTI # IDH10G120C5XKSA1-ND		Infineon Technologies AGDIODE SCHOTTKY 1200V 10A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube		638In Stock
  • 500:$5.8621
  • 100:$6.7320
  • 50:$7.7530
  • 1:$9.0000
IDH10G120C5XKSA1
DISTI # 30552871		Infineon Technologies AGDiode Schottky 1.2KV 31.9A 2-Pin(2+Tab) TO-220 Tube390
  • 100:$6.2270
  • 10:$7.3960
  • 2:$8.0990
IDH10G120C5XKSA1
DISTI # IDH10G120C5XKSA1		Infineon Technologies AGDiode Schottky Diode 1200V 31.9A 2-Pin TO-220 Tube - Rail/Tube (Alt: IDH10G120C5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$5.0900
  • 1000:$4.9900
  • 2000:$4.7900
  • 3000:$4.5900
  • 5000:$4.4900
IDH10G120C5XKSA1
DISTI # IDH10G120C5		Infineon Technologies AGDiode Schottky Diode 1200V 31.9A 2-Pin TO-220 Tube (Alt: IDH10G120C5)
RoHS: Compliant
Min Qty: 500
Container: Tube		Asia - 0
  • 500:$5.1456
  • 1000:$4.9341
  • 1500:$4.8674
  • 2500:$4.6778
  • 5000:$4.6178
  • 12500:$4.5024
  • 25000:$4.3926
IDH10G120C5XKSA1
DISTI # 12AC9655		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 31.9A, TO-220,Product Range:thinQ Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:31.9A,Total Capacitive Charge Qc:41nC,Diode Case , RoHS Compliant: Yes539
  • 1:$8.5700
  • 10:$7.7500
  • 25:$7.3900
  • 50:$6.9100
  • 100:$6.4200
  • 250:$6.1300
  • 500:$5.5900
IDH10G120C5XKSA1Infineon Technologies AG 
RoHS: Not Compliant		20
  • 1000:$5.5300
  • 500:$5.8200
  • 100:$6.0600
  • 25:$6.3200
  • 1:$6.8100
IDH10G120C5XKSA1
DISTI # 726-IDH10G120C5XKSA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant		931
  • 1:$8.5700
  • 10:$7.7500
  • 25:$7.3900
  • 100:$6.4200
  • 250:$6.1300
  • 500:$5.5900
  • 1000:$4.8700
IDH10G120C5XKSA1
DISTI # 1338556		Infineon Technologies AGSIC SCHOTTKY DIODE 1200V 10A TO-220-2, TU441
  • 500:£4.0170
  • 1000:£3.7780
IDH10G120C5XKSA1
DISTI # 2709915		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 31.9A, TO-220
RoHS: Compliant		549
  • 1:£7.1000
  • 5:£6.5400
  • 10:£5.6500
  • 50:£5.2800
  • 100:£4.9100
IDH10G120C5XKSA1
DISTI # C1S322000579165		Infineon Technologies AGRectifier Diodes
RoHS: Compliant		390
  • 100:$6.2270
  • 10:$7.3960
  • 1:$8.0990
IDH10G120C5XKSA1
DISTI # 2709915		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 31.9A, TO-220
RoHS: Compliant		529
  • 1:$14.2400
  • 50:$12.2700
  • 100:$10.6600
  • 500:$9.2800
Imagen Parte # Descripción
IDH10G120C5XKSA1

Mfr.#: IDH10G120C5XKSA1

OMO.#: OMO-IDH10G120C5XKSA1

 Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
IDH10G120C5XKSA1

Mfr.#: IDH10G120C5XKSA1

OMO.#: OMO-IDH10G120C5XKSA1-INFINEON-TECHNOLOGIES

 Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de IDH10G120C5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,59 US$
6,59 US$
10
6,26 US$
62,59 US$
100
5,93 US$
593,00 US$
500
5,60 US$
2 800,25 US$
1000
5,27 US$
5 271,10 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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