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BSC117N08NS5ATMA1

BSC117N08NS5ATMA1
Mfr. #:
BSC117N08NS5ATMA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 80V 49A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC117N08NS5ATMA1 Ficha de datos
Entrega:
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Más información:
BSC117N08NS5ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
BSC117N08NS5 SP001295028
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
50 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
3 ns
Hora de levantarse
4 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
49 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Resistencia a la fuente de desagüe de Rds
16.3 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
16 ns
Tiempo de retardo de encendido típico
10 ns
Qg-Gate-Charge
15 nC
Transconductancia directa-Mín.
19 S
Modo de canal
Mejora
Tags
BSC11, BSC1, BSC
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 49A Automotive 8-Pin TDSON EP T/R
***ark
Mosfet, N-Ch, 80V, 49A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0096Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descripción Valores Precio
BSC117N08NS5ATMA1
DISTI # BSC117N08NS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 49A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5690
BSC117N08NS5ATMA1
DISTI # BSC117N08NS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 49A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.6609
  • 500:$0.8372
  • 100:$1.0795
  • 10:$1.3660
  • 1:$1.5400
BSC117N08NS5ATMA1
DISTI # BSC117N08NS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 49A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.6609
  • 500:$0.8372
  • 100:$1.0795
  • 10:$1.3660
  • 1:$1.5400
BSC117N08NS5ATMA1
DISTI # BSC117N08NS5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 19A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC117N08NS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.5599
  • 10000:$0.5399
  • 20000:$0.5199
  • 30000:$0.5029
  • 50000:$0.4939
BSC117N08NS5ATMA1
DISTI # SP001295028		Infineon Technologies AGTrans MOSFET N-CH 80V 19A 8-Pin TDSON T/R (Alt: SP001295028)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.8349
  • 10000:€0.6509
  • 20000:€0.5819
  • 30000:€0.5289
  • 50000:€0.4959
BSC117N08NS5ATMA1
DISTI # BSC117N08NS5		Infineon Technologies AGTrans MOSFET N-CH 80V 19A 8-Pin TDSON T/R (Alt: BSC117N08NS5)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC117N08NS5ATMA1
    DISTI # 13AC8340    		Infineon Technologies AGMOSFET, N-CH, 80V, 49A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:49A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0096ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes4245
    • 1000:$0.5840
    • 500:$0.7390
    • 250:$0.7880
    • 100:$0.8370
    • 50:$0.9210
    • 25:$1.0100
    • 10:$1.0900
    • 1:$1.2800
    BSC117N08NS5ATMA1
    DISTI # 726-BSC117N08NS5ATMA    		Infineon Technologies AGMOSFET N-Ch 80V 49A TDSON-8
    RoHS: Compliant    		0
    • 1:$1.2800
    • 10:$1.0900
    • 100:$0.8370
    • 500:$0.7390
    • 1000:$0.5840
    • 5000:$0.5180
    BSC117N08NS5ATMA1
    DISTI # 2725815    		Infineon Technologies AGMOSFET, N-CH, 80V, 49A, TDSON
    RoHS: Compliant    		3995
    • 100:£0.6520
    • 25:£0.8490
    • 5:£0.9400
    BSC117N08NS5ATMA1
    DISTI # 2725815    		Infineon Technologies AGMOSFET, N-CH, 80V, 49A, TDSON
    RoHS: Compliant    		4245
    • 100:$1.7300
    • 10:$2.1800
    • 1:$2.4600
    Imagen Parte # Descripción
    BSC117N08NS5ATMA1

    Mfr.#: BSC117N08NS5ATMA1

    OMO.#: OMO-BSC117N08NS5ATMA1

    		 MOSFET N-Ch 80V 49A TDSON-8
    BSC117N08NS5

    Mfr.#: BSC117N08NS5

    OMO.#: OMO-BSC117N08NS5-1190

    		 Nuevo y original
    BSC117N08NS5ATMA1

    Mfr.#: BSC117N08NS5ATMA1

    OMO.#: OMO-BSC117N08NS5ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 80V 49A TDSON-8
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de BSC117N08NS5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,74 US$
    0,74 US$
    10
    0,70 US$
    7,04 US$
    100
    0,67 US$
    66,68 US$
    500
    0,63 US$
    314,85 US$
    1000
    0,59 US$
    592,70 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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