GS81302T09E-250I

GS81302T09E-250I
Mfr. #:
GS81302T09E-250I
Fabricante:
GSI Technology
Descripción:
SRAM 1.8 or 1.5V 16M x 9 144M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS81302T09E-250I Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS81302T09E-250I más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
Tamaño de la memoria:
144 Mbit
Organización:
16 M x 9
Frecuencia máxima de reloj:
250 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
1.9 V
Voltaje de suministro - Min:
1.7 V
Corriente de suministro - Máx .:
605 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-165
Embalaje:
Bandeja
Tipo de memoria:
DDR-II
Serie:
GS81302T09E
Escribe:
SigmaDDR-II B2
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
10
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
SigmaDDR-II
Tags
GS81302T09E, GS81302T09, GS81302T0, GS81302T, GS81302, GS8130, GS813, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V 144M-Bit 16M x 9-Bit 0.45ns 165-Pin FBGA Tray
DDR SRAMs
GSI Technology SigmaDDR™ SRAMs are synchronous memories with a common read and write data bus that combine capacity and performance with transaction rates unequaled by competitors. SigmaDDR SRAMs "DDR" refers to their ability to transfer 2 beats of data on the data bus in a single clock cycle. SigmaDDR memories are ideal for applications that alternate between read and write operations infrequently, at operating speeds of 250 MHz and above. GSI’s SigmaDDR devices are compatible with all competitor Double Data Rate SRAMs.
Imagen Parte # Descripción
GS81302T19GE-350

Mfr.#: GS81302T19GE-350

OMO.#: OMO-GS81302T19GE-350

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302TT07GE-300I

Mfr.#: GS81302TT07GE-300I

OMO.#: OMO-GS81302TT07GE-300I

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302T19GE-300I

Mfr.#: GS81302T19GE-300I

OMO.#: OMO-GS81302T19GE-300I

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T11E-450I

Mfr.#: GS81302T11E-450I

OMO.#: OMO-GS81302T11E-450I

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302TT06E-450M

Mfr.#: GS81302TT06E-450M

OMO.#: OMO-GS81302TT06E-450M

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302T20E-350

Mfr.#: GS81302T20E-350

OMO.#: OMO-GS81302T20E-350

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T11E-450

Mfr.#: GS81302T11E-450

OMO.#: OMO-GS81302T11E-450

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302T18E-350

Mfr.#: GS81302T18E-350

OMO.#: OMO-GS81302T18E-350

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T10E-400

Mfr.#: GS81302T10E-400

OMO.#: OMO-GS81302T10E-400

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302T20E-500

Mfr.#: GS81302T20E-500

OMO.#: OMO-GS81302T20E-500

SRAM 1.8 or 1.5V 8M x 18 144M
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de GS81302T09E-250I es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
150,38 US$
150,38 US$
25
139,64 US$
3 491,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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