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C2M0160120D

C2M0160120D
Mfr. #:
C2M0160120D
Fabricante:
N/A
Descripción:
MOSFET N-CH 1200V 19A TO-247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
C2M0160120D Ficha de datos
Entrega:
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Más información:
C2M0160120D más información
Atributo del producto
Valor de atributo
Fabricante
CREE
categoria de producto
FET - Single
Serie
Z-FET
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tecnología
Sic
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
A través del orificio
Número de canales
1 Channel
Paquete de dispositivo de proveedor
TO-247-3
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
125W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
1200V (1.2kV)
Entrada-Capacitancia-Ciss-Vds
527pF @ 800V
Función FET
Carburo de silicio (SiC)
Corriente-Continuo-Drenaje-Id-25 ° C
17.7A (Tc)
Rds-On-Max-Id-Vgs
196 mOhm @ 10A, 20V
Vgs-th-Max-Id
2.5V @ 500μA
Puerta-Carga-Qg-Vgs
32.6nC @ 20V
Disipación de potencia Pd
125 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
7 ns
Hora de levantarse
12 ns
Vgs-Puerta-Fuente-Voltaje
- 10 V + 25 V
Id-corriente-de-drenaje-continua
17.7 A
Vds-Drain-Source-Breakdown-Voltage
1200 V
Vgs-th-Gate-Source-Threshold-Voltage
2.5 V
Resistencia a la fuente de desagüe de Rds
160 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
13 ns
Tiempo de retardo de encendido típico
7 ns
Qg-Gate-Charge
32.6 nC
Transconductancia directa-Mín.
4.1 S
Modo de canal
Mejora
Tags
C2M0, C2M
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH SiC 1.2KV 19A 3-Pin(3+Tab) TO-247
***p One Stop Global
Trans MOSFET N-CH 12V 17.7A 3-Pin(3+Tab) TO-247
***ark
SIC MOSFET, N CHANNEL, 1.2KV, 17.7A, TO-247-3
***ment14 APAC
SIC MOSFET, N-CH, 1.2KV, 17.7A, TO-247-3
***Components
N-CHANNEL SIC MOSFET 1.2KV 19A TO247
***i-Key
MOSFET N-CH 1200V 17.7A TO-247
***hardson RFPD
SILICON CARBIDE POWER TRANSISTORS/MODULES
Wolfspeed C2M™ SiC Power MOSFETs
Wolfspeed C2M family of Silicon Carbide Power MOSFETs provide engineers a wide range of 1200V and 1700V SiC MOSFETs. Wolfspeed SiC MOSFETs enable engineers to replace silicon transistors (IGBTs) and develop high-voltage circuits with extremely fast switching speeds and ultra-low switching losses. Used in conjunction with Wolfspeed SiC Schottky diodes in an all-SiC system, the C2M SiC MOSFET allows design engineers to achieve levels of energy efficiency, size, and weight reduction that are not possible with available silicon power devices of comparable ratings. The new C2M family of MOSFETs is based on a rugged and reliable Gen2 SiC technology platform, providing the lowest switching losses in their class. The C2M significantly higher switching frequencies, all at lower cost. This revolutionary series also reduces the size of magnetics and filter components and significantly reduces cooling requirements.Learn more
Parte # Mfg. Descripción Valores Precio
C2M0160120D
DISTI # V99:2348_06265416		Cree, Inc.Trans MOSFET N-CH SiC 12V 17.7A 3-Pin(3+Tab) TO-247
RoHS: Compliant		600
  • 1:$8.2769
C2M0160120D
DISTI # C2M0160120D-ND		WolfspeedMOSFET N-CH 1200V 19A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		5462In Stock
  • 1:$8.7500
C2M0160120D
DISTI # 31274971		Cree, Inc.Trans MOSFET N-CH SiC 12V 17.7A 3-Pin(3+Tab) TO-247
RoHS: Compliant		600
  • 1:$8.2769
C2M0160120D
DISTI # 98Y6012		WolfspeedMOSFET, N-CH, 1.2KV, 19A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V,Power , RoHS Compliant: Yes840
  • 1:$9.2300
C2M0160120D
DISTI # 08X3830		WolfspeedSIC MOSFET, N CHANNEL, 1.2KV, 17.7A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:17.7A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes600
  • 1:$9.2300
C2M0160120D
DISTI # 941-C2M0160120D		Cree, Inc.MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
RoHS: Compliant		1884
  • 1:$8.3300
C2M0160120D
DISTI # 9047348		Cree, Inc.N-CHANNEL SIC MOSFET 1.2KV 19A TO247, EA65
  • 1:£6.5300
  • 5:£6.3300
  • 10:£6.2000
  • 30:£6.0800
  • 60:£5.9600
C2M0160120D
DISTI # 9047348P		Cree, Inc.N-CHANNEL SIC MOSFET 1.2KV 19A TO247, TU636
  • 5:£6.3300
  • 10:£6.2000
  • 30:£6.0800
  • 60:£5.9600
C2M0160120D
DISTI # C2M0160120D		WolfspeedTransistor: N-MOSFET,SiC,unipolar,1.2kV,17.7A,125W,TO247-36
  • 1:$15.8700
  • 3:$13.4200
  • 10:$10.6000
  • 30:$9.8700
C2M0160120D
DISTI # C2M0160120D		WolfspeedSILICON CARBIDE POWER TRANSISTORS/MODULES
RoHS: Compliant		115107
  • 1:$7.4900
  • 50:$7.2500
C2M0160120D
DISTI # 2630830		WolfspeedMOSFET, N-CH, 1.2KV, 19A, TO-247
RoHS: Compliant		866
  • 1:£7.1200
  • 5:£6.5500
  • 10:£6.4200
  • 50:£6.3600
  • 100:£6.3500
C2M0160120D
DISTI # 2630830		WolfspeedMOSFET, N-CH, 1.2KV, 19A, TO-247
RoHS: Compliant		840
  • 1:$13.5300
Imagen Parte # Descripción
C2M0160120D

Mfr.#: C2M0160120D

OMO.#: OMO-C2M0160120D

 MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
C2M0160120

Mfr.#: C2M0160120

OMO.#: OMO-C2M0160120-1190

 Nuevo y original
C2M0160120D

Mfr.#: C2M0160120D

OMO.#: OMO-C2M0160120D-WOLFSPEED

 MOSFET N-CH 1200V 19A TO-247
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de C2M0160120D es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
10,88 US$
10,88 US$
10
10,33 US$
103,31 US$
100
9,79 US$
978,75 US$
500
9,24 US$
4 621,90 US$
1000
8,70 US$
8 700,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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