FGH40N60UFTU

FGH40N60UFTU
Mfr. #:
FGH40N60UFTU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 600V 40A Field Stop
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGH40N60UFTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FGH40N60UFTU más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247AB-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje máximo del emisor de puerta:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
FGH40N60UF
Embalaje:
Tubo
Corriente continua de colector Ic Max:
80 A
Altura:
20.6 mm
Longitud:
15.6 mm
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Unidad de peso:
0.225401 oz
Tags
FGH40N60U, FGH40N60, FGH40N6, FGH40N, FGH40, FGH4, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FGH40N60UF Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247-3
***th Star Micro
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, FIELD STOP, 600V, 40A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***p One Stop Global
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
***nell
IGBT, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***ical
Trans IGBT Chip N-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-247 Rail
***ark
Insulated-Gate Bipolar Transistor (IGBT); Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:290W ;RoHS Compliant: Yes
***rchild Semiconductor
The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 349W TO-247-3
***ure Electronics
FGH40N60SMD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, FIELD STOP, 600V, 40A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ical
Trans IGBT Chip N=-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
FGH40N60SMDF Series 600 V 80 A 92 ns Flange Mount Field Stop IGBT - TO-247
***el Electronic
FAIRCHILD SEMICONDUCTOR FGH40N60SMDF IGBT Single Transistor, General Purpose, 80 A, 600 V, 349 W, 600 V, TO-247AB, 3 Pins
***nell
IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:349W
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 100A 360000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
50 A, 600 V field stop trench gate IGBT with Ultrafast diode
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
***el Electronic
IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
***ponent Stockers USA
100 A 600 V N-CHANNEL IGBT TO-247
***et
STMICROELECTRONICS STGW50H60DF IGBTS
***ure Electronics
STGWA19NC60HD Series 600 V 52 A Very Fast IGBT with Ultrafast Diode - TO-247
***ical
Trans IGBT Chip N-CH 600V 52A 208000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Parte # Mfg. Descripción Valores Precio
FGH40N60UFTU
DISTI # V99:2348_06359727
ON Semiconductor600V, 40A FIELD STOP IGBT450
  • 5000:$1.4580
  • 2500:$1.5089
  • 1000:$1.5760
  • 500:$1.7580
  • 250:$1.9380
  • 100:$2.0480
  • 10:$2.3150
  • 1:$2.6650
FGH40N60UFTU
DISTI # FGH40N60UFTU-ND
ON SemiconductorIGBT 600V 80A 290W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
445In Stock
  • 1350:$1.7052
  • 900:$2.0219
  • 450:$2.2533
  • 10:$2.8990
  • 1:$3.2300
FGH40N60UFTU
DISTI # 30311780
ON Semiconductor600V, 40A FIELD STOP IGBT450
  • 250:$1.9380
  • 100:$2.0480
  • 10:$2.3150
  • 4:$2.6650
FGH40N60UFTU
DISTI # 30313120
ON Semiconductor600V, 40A FIELD STOP IGBT420
  • 5000:$1.5478
  • 2500:$1.5624
  • 1000:$1.6430
  • 500:$1.9454
  • 250:$2.1672
  • 100:$2.2882
  • 30:$2.6309
FGH40N60UFTU
DISTI # FGH40N60UFTU
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube (Alt: FGH40N60UFTU)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$1.4900
  • 900:$1.4900
  • 1800:$1.3900
  • 2700:$1.3900
  • 4500:$1.3900
FGH40N60UFTU
DISTI # FGH40N60UFTU
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247AB Tube (Alt: FGH40N60UFTU)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€1.6900
  • 10:€1.5900
  • 25:€1.4900
  • 50:€1.4900
  • 100:€1.3900
  • 500:€1.3900
  • 1000:€1.3900
FGH40N60UFTU
DISTI # 88T3387
ON SemiconductorIGBT, FIELD STOP, 600V, 40A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C , RoHS Compliant: Yes2600
  • 1:$3.3400
  • 10:$2.8500
  • 25:$2.7400
  • 50:$2.6100
  • 100:$2.5000
  • 250:$2.3700
  • 500:$2.1400
FGH40N60UFTU
DISTI # 512-FGH40N60UFTU
ON SemiconductorIGBT Transistors 600V 40A Field Stop
RoHS: Compliant
1711
  • 1:$3.0800
  • 10:$2.6100
  • 100:$2.2700
  • 250:$2.1500
  • 500:$1.9300
  • 1000:$1.6300
  • 2500:$1.5500
  • 5000:$1.4900
FGH40N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB
RoHS: Compliant
5250
  • 1000:$1.9000
  • 500:$2.0000
  • 100:$2.0800
  • 25:$2.1700
  • 1:$2.3400
FGH40N60UFTU
DISTI # 2083379
ON SemiconductorIGBT, FIELD STOP, 600V, 40A, TO-247
RoHS: Compliant
3500
  • 1:£2.6800
  • 10:£2.0200
  • 100:£1.7500
  • 250:£1.6600
  • 500:£1.4900
FGH40N60UFTU
DISTI # 2083379
ON SemiconductorIGBT, FIELD STOP, 600V, 40A, TO-247
RoHS: Compliant
2600
  • 1:$4.8800
  • 10:$4.1300
  • 100:$3.6000
  • 250:$3.4100
  • 500:$3.0600
  • 1000:$2.5900
  • 2500:$2.4600
  • 5000:$2.3700
FGH40N60UFTU
DISTI # C1S541901510235
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247AB Tube
RoHS: Compliant
450
  • 250:$1.9380
  • 100:$2.0480
  • 10:$2.3150
  • 1:$2.6650
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Thick Film Resistors - SMD 10K OHM 1%
SF-1206FP050-2

Mfr.#: SF-1206FP050-2

OMO.#: OMO-SF-1206FP050-2

Surface Mount Fuses 0.5A Fast Acting 1206 Singlfuse
MGJ2D051509SC

Mfr.#: MGJ2D051509SC

OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
PMR100HZPFU6L00

Mfr.#: PMR100HZPFU6L00

OMO.#: OMO-PMR100HZPFU6L00-ROHM-SEMI

RES 0.006 OHM 1% 2W 2512
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de FGH40N60UFTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,08 US$
3,08 US$
10
2,61 US$
26,10 US$
100
2,27 US$
227,00 US$
250
2,15 US$
537,50 US$
500
1,93 US$
965,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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