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FDFME2P823ZT

FDFME2P823ZT
Mfr. #:
FDFME2P823ZT
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDFME2P823ZT Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Unidad de peso
0.000889 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
microFET-6
Tecnología
Si
Número de canales
2 Channel
Configuración
Single with Schottky Diode
Tipo transistor
2 P-Channel
Disipación de potencia Pd
1.3 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
16 ns
Hora de levantarse
4.8 ns
Vgs-Puerta-Fuente-Voltaje
+/- 8 V
Id-corriente-de-drenaje-continua
- 2.3 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Vgs-th-Gate-Source-Threshold-Voltage
- 0.6 V
Resistencia a la fuente de desagüe de Rds
95 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
33 ns
Tiempo de retardo de encendido típico
4.7 ns
Qg-Gate-Charge
5.5 nC
Transconductancia directa-Mín.
7 S
Tags
FDFME, FDFM, FDF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET P-CH 20V 2.3A 6-Pin MicroFET T/R
***nell
MOSFET, P CH, 20V, 2.6A, 6MICROFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:1.4W; Transistor Case Style:µFET; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable appliacrions. It features as MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum condution losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
Parte # Mfg. Descripción Valores Precio
FDFME2P823ZT
DISTI # FDFME2P823ZTTR-ND		ON SemiconductorMOSFET P-CH 20V 2.6A 6MICROFET
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
    FDFME2P823ZT
    DISTI # FDFME2P823ZTCT-ND    		ON SemiconductorMOSFET P-CH 20V 2.6A 6MICROFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDFME2P823ZT
      DISTI # FDFME2P823ZTDKR-ND      		ON SemiconductorMOSFET P-CH 20V 2.6A 6MICROFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDFME2P823ZTFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		40000
        • 1000:$0.2900
        • 500:$0.3100
        • 100:$0.3200
        • 25:$0.3400
        • 1:$0.3600
        FDFME2P823ZT
        DISTI # 512-FDFME2P823ZT        		ON SemiconductorMOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode
        RoHS: Compliant        		0
          Imagen Parte # Descripción
          FDFME2P823ZT

          Mfr.#: FDFME2P823ZT

          OMO.#: OMO-FDFME2P823ZT-ON-SEMICONDUCTOR

          		 IGBT Transistors MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode
          Disponibilidad
          Valores:
          Available
          En orden:
          1500
          Ingrese la cantidad:
          El precio actual de FDFME2P823ZT es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          0,39 US$
          0,39 US$
          10
          0,37 US$
          3,70 US$
          100
          0,35 US$
          35,10 US$
          500
          0,33 US$
          165,75 US$
          1000
          0,31 US$
          312,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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