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SSM6N357R,LF

SSM6N357R,LF
Mfr. #:
SSM6N357R,LF
Fabricante:
Toshiba
Descripción:
MOSFET LowON Res MOSFET ID=.65A VDSS=60V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SSM6N357R,LF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM6N357R,LF DatasheetSSM6N357R,LF Datasheet (P4-P6)SSM6N357R,LF Datasheet (P7-P9)
ECAD Model:
Más información:
SSM6N357R,LF más información
Atributo del producto
Valor de atributo
Fabricante:
Toshiba
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TSOP-6F
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
650 mA
Rds On - Resistencia de la fuente de drenaje:
1.8 Ohms
Vgs th - Voltaje umbral puerta-fuente:
1.3 V
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
1.5 nC
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1 W
Configuración:
Doble
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
SSM6N357R
Marca:
Toshiba
Transconductancia directa - Mín .:
500 mS
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
3000 ns
Tiempo típico de retardo de encendido:
990 ns
Unidad de peso:
0.000564 oz
Tags
SSM6N35, SSM6N3, SSM6N, SSM6, SSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs
SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs are silicon N-channel MOSFETs designed for relay driver applications. The SSM6N357R,LF comes with 2 channels whereas the SSM3K357R,LF comes with a single channel. These MOSFETs feature 3V gate drive voltage, built-in internal zener diodes, resistors, and 2kV class Human Body Model (HBM). The low ON-resistance MOSFETs offer 60V drain-source voltage, ±12V gate-source voltage, 150°C channel temperature, and 12.6mJ single-pulse avalanche energy. 
SSM6 Low On-resistance MOSFET
Toshiba SSM6 Low On-resistance MOSFETs with high-speed switching operate as both power management switches and analog switches. These MOSFETs provide very low on-resistance as low as 1.1mΩ to a 115Ω maximum for different sets of gate to source voltage range. The SSM6 MOSFETs are available in small profile packages with surface mount compatibility. These MOSFETs offer a low drain to source on-resistance and operate as DC to DC converters. The SSM6 MOSFETs drive a 1.2V minimum to 4.5V maximum gate voltage. These MOSFETs deliver less drain power dissipation up to 150mW producing less heat. The SM66 MOSFETs operate at 12V to 100V input voltage range.   
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Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de SSM6N357R,LF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,44 US$
0,44 US$
10
0,32 US$
3,25 US$
100
0,20 US$
20,50 US$
1000
0,15 US$
154,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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