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CWDM305ND TR13

CWDM305ND TR13
Mfr. #:
CWDM305ND TR13
Fabricante:
Central Semiconductor
Descripción:
MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CWDM305ND TR13 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CWDM305ND TR13 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor central
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOIC-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
5.8 A
Rds On - Resistencia de la fuente de drenaje:
34 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
6.3 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2 W
Configuración:
Doble
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
CWDM
Tipo de transistor:
2 N-Channel
Marca:
Semiconductor central
Transconductancia directa - Mín .:
12 S
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
CWDM305ND PBFREE TR13
Unidad de peso:
0.019048 oz
Tags
CWDM305N, CWDM305, CWDM3, CWDM, CWD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
N-Channel Enhancement Mode MOSFET Dual 30V 5.8A 8-Pin SOIC T/R
***i-Key
MOSFET 2N-CH 30V 5.8A 8SOIC
***(Formerly Allied Electronics)
IRF7313PBF Dual N-channel MOSFET Transistor; 6.5 A; 30 V; 8-Pin SOIC
***eco
Transistor MOSFET N Channel 30 Volt 6.5 .6 Amp 8 Pin SOIC Tape and Reel
***et
Transistor MOSFET Array Dual N-CH 30V 6.5A 8-Pin SOIC Tube
***ure Electronics
Dual N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8
***nell
MOSFET, DUAL, NN, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Di
***(Formerly Allied Electronics)
IRF7319PBF Dual N/P-channel MOSFET Transistor; 4.9 A; 6.5 A; 30 V; 8-Pin SOIC
***p One Stop Global
Trans MOSFET N/P-CH Si 30V 6.5A/4.9A 8-Pin SOIC Tube
***ure Electronics
Dual N/P-Channel 30V 0.029/0.058 Ohm 22/23 nC HEXFET® Power Mosfet - SOIC-8
***ment14 APAC
DUAL N/P CHANNEL MOSFET, 30V, SOIC; TRAN; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A;
***ineon SCT
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***roFlash
Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V;
***ark
Dual N/p Channel Mosfet, 30V, Soic; Channel Type:dual N And Dual P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:6.5A; No. Of Pins:8Pins Rohs Compliant: Yes
***emi
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V, 7A, 23mΩ
***ure Electronics
N-Channel 30 V 23 mOhm Integrated PowerTrench® Mosfet SOIC-8
***et Europe
Trans MOSFET N-CH 30V 7A 8-Pin SOIC N T/R
***nell
MOSFET, N, FETKY, SMD, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:7A; Resistance, Rds On:0.019ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Id Max:30A; Current, If AV:2mA; Power Dissipation:2mW; Voltage, Vds Max:30V; Voltage, Vf Max:0.45V; Voltage, Vgs th Max:2.5V
***rchild Semiconductor
The FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
***Yang
Transistor MOSFET Array Dual N-CH 30V 7.5A 8-Pin SOIC T/R
***emi
Dual N-Channel PowerTrench® SyncFET™, 30V, 7.5A, 22mΩ
***ment14 APAC
N CHANNEL MOSFET, 30V, 7.5mA; Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Current Id Max:7.5mA; Operating Temperature Range:-55°C to +150°C; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of the FDS6990AS as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.
***Yang
Transistor MOSFET Array Dual N-CH 30V 6A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 6A, 28mΩ
***essParts.Net
FAIRCHILD FDS6912A / MOSFET N-CH DUAL 30V 6A 8SOIC
***ment14 APAC
MOSFET, DUAL, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:1.6W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6A; Package / Case:SOIC; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDS6912A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
Parte # Mfg. Descripción Valores Precio
CWDM305ND TR13
DISTI # CWDM305NDCT-ND		Central Semiconductor CorpMOSFET 2N-CH 30V 5.8A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2490In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
CWDM305ND TR13
DISTI # CWDM305NDDKR-ND		Central Semiconductor CorpMOSFET 2N-CH 30V 5.8A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2490In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
CWDM305ND TR13
DISTI # CWDM305NDTR-ND		Central Semiconductor CorpMOSFET 2N-CH 30V 5.8A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.3190
CWDM305ND TR13
DISTI # CWDM305ND TR13		Central Semiconductor CorpN-Channel Enhancement Mode MOSFET Dual 30V 5.8A 8-Pin SOIC T/R - Tape and Reel (Alt: CWDM305ND TR13)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.2629
  • 5000:$0.2509
  • 10000:$0.2449
  • 15000:$0.2339
  • 25000:$0.2279
CWDM305ND TR13
DISTI # 610-CWDM305ND-TR13		Central Semiconductor CorpMOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode
RoHS: Compliant		0
  • 2500:$0.2710
  • 10000:$0.2610
  • 25000:$0.2500
Imagen Parte # Descripción
CWDM305N TR13

Mfr.#: CWDM305N TR13

OMO.#: OMO-CWDM305N-TR13

 MOSFET N-Ch Enh Mode FET 30Vds 20Vgs 2.0W
CWDM305ND TR13

Mfr.#: CWDM305ND TR13

OMO.#: OMO-CWDM305ND-TR13

 MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode
CWDM305PD TR13

Mfr.#: CWDM305PD TR13

OMO.#: OMO-CWDM305PD-TR13

 MOSFET SMD Small Sig Mosfet Dual P-Ch Enh Mode
CWDM305N

Mfr.#: CWDM305N

OMO.#: OMO-CWDM305N-1190

 Nuevo y original
CWDM305N TR13

Mfr.#: CWDM305N TR13

OMO.#: OMO-CWDM305N-TR13-CENTRAL-SEMICONDUCTOR

 MOSFET N-CH 30V 5.8A 8SOIC
CWDM305ND

Mfr.#: CWDM305ND

OMO.#: OMO-CWDM305ND-1190

 Nuevo y original
CWDM305P

Mfr.#: CWDM305P

OMO.#: OMO-CWDM305P-1190

 Nuevo y original
CWDM305PD

Mfr.#: CWDM305PD

OMO.#: OMO-CWDM305PD-1190

 Nuevo y original
CWDM305ND TR13

Mfr.#: CWDM305ND TR13

OMO.#: OMO-CWDM305ND-TR13-CENTRAL-SEMICONDUCTOR

 MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode
CWDM305P TR13

Mfr.#: CWDM305P TR13

OMO.#: OMO-CWDM305P-TR13-CENTRAL-SEMICONDUCTOR

 MOSFET SMD Small Sig Mosfet P-Channel Enh Mode
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de CWDM305ND TR13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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