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SQD30N05-20L_GE3

SQD30N05-20L_GE3
Mfr. #:
SQD30N05-20L_GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET N-Channel 55V AEC-Q101 Qualified
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SQD30N05-20L_GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQD30N05-20L_GE3 DatasheetSQD30N05-20L_GE3 Datasheet (P4-P6)SQD30N05-20L_GE3 Datasheet (P7-P9)SQD30N05-20L_GE3 Datasheet (P10-P11)
ECAD Model:
Más información:
SQD30N05-20L_GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
55 V
Id - Corriente de drenaje continua:
30 A
Rds On - Resistencia de la fuente de drenaje:
16 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
18 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
50 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SQ
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
34 S
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
18 ns
Tiempo típico de retardo de encendido:
7 ns
Unidad de peso:
0.011993 oz
Tags
SQD30N, SQD30, SQD3, SQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 30 A, 55 V, 0.016 Ohm, 10 V, 2 V
***ical
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK
***et
N-CHANNEL 55-V (D-S) 175C MOSFET
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET,N CH,W DIODE,55V,30A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:5V
***ineon SCT
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
***ure Electronics
Single N-Channel 55 V 24.5 mOhm 27 nC Automotive HEXFET® Power Mosfet - DPAK
***icontronic
Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ment14 APAC
MOSFET,N CH,55V,30A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:48W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 60 V 0.022 Ohms Surface Mount Power Mosfet - TO-252
***p One Stop
Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK
***nell
MOSFET,N CH,W DIODE,60V,25A,TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 62W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Voltage Vgs Max: 20V
***eco
Transistor MOSFET P Channel 55 Volt 31 Amp 3-Pin 2+ Tab Dpak Tape and Reel
***ure Electronics
Single P-Channel 55 V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-252AA
***sible Micro
Transistor, Power MOSFET, P-channel, -55V, -31A, D-PAK, SMD
***ineon SCT
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***nell
MOSFET, P CH, 55V, 31A, D-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: -31A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
*** Stop Electro
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ure Electronics
N-Channel 60 V 21 mOhm Surface Mount PowerTrench Mosfet TO-252-3
*** Source Electronics
Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 8.5A D-PAK
***emi
N-Channel PowerTrench® MOSFET, 38A, 21mΩ
***r Electronics
Power Field-Effect Transistor, 38A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ark
MOSFET; Transistor Type:MOSFET; Continuous Drain Current, Id:8.5A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.4V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
***ure Electronics
SQD23N06 Series 60 V 23 A 31 mOhm Automotive N-Channel Mosfet - TO-252-3
***ical
Trans MOSFET N-CH 60V 23A Automotive 3-Pin(2+Tab) DPAK
***el Electronic
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
***ark
MOSFET, N-CH, 60V, 23A, TO-252 ROHS COMPLIANT: YES
***SIT Distribution GmbH
Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***et
N-CH 60-V (D-S) 175C MOSFET LOGIC LE
***S
French Electronic Distributor since 1988
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Parte # Mfg. Descripción Valores Precio
SQD30N05-20L_GE3
DISTI # SQD30N05-20L_GE3TR-ND		Vishay SiliconixMOSFET N-CH 55V 30A TO252
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		2000In Stock
  • 10000:$0.5806
  • 6000:$0.6033
  • 2000:$0.6350
SQD30N05-20L_GE3
DISTI # SQD30N05-20L_GE3CT-ND		Vishay SiliconixMOSFET N-CH 55V 30A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2000In Stock
  • 1000:$0.7008
  • 500:$0.8877
  • 100:$1.0746
  • 10:$1.3780
  • 1:$1.5400
SQD30N05-20L_GE3
DISTI # SQD30N05-20L_GE3DKR-ND		Vishay SiliconixMOSFET N-CH 55V 30A TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2000In Stock
  • 1000:$0.7008
  • 500:$0.8877
  • 100:$1.0746
  • 10:$1.3780
  • 1:$1.5400
SQD30N05-20L_GE3
DISTI # SQD30N05-20L_GE3		Vishay IntertechnologiesTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK (Alt: SQD30N05-20L_GE3)
RoHS: Compliant
Min Qty: 2000		Europe - 2000
  • 20000:€0.4919
  • 12000:€0.5139
  • 8000:€0.5809
  • 4000:€0.7169
  • 2000:€0.9999
SQD30N05-20L_GE3
DISTI # SQD30N05-20L_GE3		Vishay IntertechnologiesTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD30N05-20L_GE3)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
    SQD30N05-20L -GE3
    DISTI # 37T8236    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 30 A, 55 V, 0.016 ohm, 10 V, 2 V RoHS Compliant: Yes59
    • 1000:$0.8630
    • 500:$0.9220
    • 100:$1.0700
    • 50:$1.1800
    • 25:$1.2900
    • 10:$1.3900
    • 1:$1.6900
    SQD30N05-20L_GE3
    DISTI # 78-SQD30N05-20L_GE3    		Vishay IntertechnologiesMOSFET N-Channel 55V AEC-Q101 Qualified
    RoHS: Compliant    		4554
    • 1:$1.6000
    • 10:$1.4900
    • 100:$1.0900
    • 500:$0.9270
    • 1000:$0.7300
    • 2000:$0.6590
    • 4000:$0.6080
    • 10000:$0.5680
    SQD30N05-20L-GE3
    DISTI # 78-SQD30N05-20L-GE3    		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQD30N05-20L_GE3
    RoHS: Compliant    		0
      SQD30N05-20L-GE3Vishay Intertechnologies 1958
        SQD30N05-20L_GE3
        DISTI # XSKDRABV0027382        		Vishay IntertechnologiesTelecom Circuit, 1-Func
        RoHS: Compliant        		6000 in Stock0 on Order
        • 6000:$0.6853
        • 2000:$0.7343
        SQD30N05-20L -GE3
        DISTI # 1869909        		Vishay IntertechnologiesMOSFET,N CH,W DIODE,55V,30A,TO-252
        RoHS: Compliant        		59
        • 6000:$1.5800
        • 2000:$1.6300
        • 1000:$1.7200
        • 500:$1.8200
        • 250:$1.9300
        • 100:$2.1000
        • 10:$2.4200
        • 1:$2.7800
        SQD30N05-20L -GE3
        DISTI # 1869909        		Vishay IntertechnologiesMOSFET,N CH,W DIODE,55V,30A,TO-252115
        • 500:£0.7910
        • 250:£0.8120
        • 100:£0.8330
        • 10:£1.1400
        • 1:£1.5000
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        Disponibilidad
        Valores:
        Available
        En orden:
        1987
        Ingrese la cantidad:
        El precio actual de SQD30N05-20L_GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,60 US$
        1,60 US$
        10
        1,49 US$
        14,90 US$
        100
        1,09 US$
        109,00 US$
        500
        0,93 US$
        463,50 US$
        1000
        0,73 US$
        730,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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