A3T19H455W23SR6

A3T19H455W23SR6
Mfr. #:
A3T19H455W23SR6
Fabricante:
NXP Semiconductors
Descripción:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A3T19H455W23SR6 Ficha de datos
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HTML Datasheet:
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ECAD Model:
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A3T19H455W23SR6 más información A3T19H455W23SR6 Product Details
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N dual
Tecnología:
Si
Id - Corriente de drenaje continua:
3.6 A
Vds - Voltaje de ruptura de drenaje-fuente:
- 500 mV, 65 V
Ganar:
16.4 dB
Potencia de salida:
81 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
ACP-1230S-4L2S
Embalaje:
Carrete
Frecuencia de operación:
1930 MHz to 1990 MHz
Escribe:
RF Power MOSFET
Marca:
Semiconductores NXP
Número de canales:
2 Channel
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
150
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 6 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
1.4 V
Parte # Alias:
935363503128
Tags
A3T1, A3T
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
Parte # Mfg. Descripción Valores Precio
A3T19H455W23SR6
DISTI # A3T19H455W23SR6-ND
NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 150:$119.7000
A3T19H455W23SR6
DISTI # A3T19H455W23SR6
Avnet, Inc.Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V - Tape and Reel (Alt: A3T19H455W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel
Americas - 0
    A3T19H455W23SR6
    DISTI # 51AC1917
    NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTOR, 1930-1990 MHZ, 81 W AVG., 30 V REEL0
    • 100:$112.5000
    • 50:$119.7000
    • 25:$121.5000
    • 10:$123.3000
    • 5:$126.9000
    • 1:$130.5000
    A3T19H455W23SR6
    DISTI # 771-A3T19H455W23SR6
    NXP SemiconductorsRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V
    RoHS: Compliant
    0
    • 150:$111.3500
    Imagen Parte # Descripción
    A3T19H455W23SR6

    Mfr.#: A3T19H455W23SR6

    OMO.#: OMO-A3T19H455W23SR6

    RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V
    A3T19H455W23SR6

    Mfr.#: A3T19H455W23SR6

    OMO.#: OMO-A3T19H455W23SR6-NXP-SEMICONDUCTORS

    AIRFAST RF POWER LDMOS TRANSISTO
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de A3T19H455W23SR6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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