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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| FQB13N06LTM | Fairchild Semiconductor | Power Field-Effect Transistor, 13.6A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 569 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: FQB13N06 OMO.#: OMO-FQB13N06-1190 |
Nuevo y original |
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Mfr.#: FQB13N06L OMO.#: OMO-FQB13N06L-1190 |
Nuevo y original |
|
Mfr.#: FQB13N06LTM |
MOSFET N-CH 60V 13.6A D2PAK |
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|
Mfr.#: FQB13N06LTM-NL OMO.#: OMO-FQB13N06LTM-NL-1190 |
Nuevo y original |
|
|
Mfr.#: FQB13N06LTMFSC OMO.#: OMO-FQB13N06LTMFSC-1190 |
Nuevo y original |
|
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Mfr.#: FQB13N06TM |
MOSFET N-CH 60V 13A D2PAK |