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SI4420BDY-T1-GE3

SI4420BDY-T1-GE3
Mfr. #:
SI4420BDY-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 30V 9.5A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4420BDY-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI4420BDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI4420BDY-GE3
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOIC-Narrow-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
1.4 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
11 ns
Hora de levantarse
11 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
9.5 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
8.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
40 ns
Tiempo de retardo de encendido típico
15 ns
Modo de canal
Mejora
Tags
SI4420BDY-T, SI4420B, SI4420, SI442, SI44, SI4
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We provide 90-360 days warranty.

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 9.5A 8-Pin SOIC N T/R
***ure Electronics
30V, 13.5A, 0.0085ohm,TrenchFET Power MOSFET, N-Channel, SO-8
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:13500mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.011ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4420BDY-T1-GE3
DISTI # SI4420BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 9.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		672In Stock
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
SI4420BDY-T1-GE3
DISTI # SI4420BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 9.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    SI4420BDY-T1-GE3
    DISTI # SI4420BDY-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 30V 9.5A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 2500:$0.3190
    SI4420BDY-T1-GE3
    DISTI # SI4420BDY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4420BDY-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.8289
    • 5000:$0.8049
    • 10000:$0.7719
    • 15000:$0.7499
    • 25000:$0.7299
    SI4420BDY-T1-GE3
    DISTI # 16P3736    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 13.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:13.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1:$1.2600
    • 10:$1.0400
    • 25:$0.9580
    • 50:$0.8760
    • 100:$0.7940
    • 250:$0.7380
    • 500:$0.6820
    SI4420BDY-T1-GE3
    DISTI # 781-SI4420BDY-T1-GE3    		Vishay IntertechnologiesMOSFET 30V 13.5A 2.5W 8.5mohm @ 10V
    RoHS: Compliant    		2296
    • 1:$1.2600
    • 10:$1.0400
    • 100:$0.7940
    • 500:$0.6820
    • 1000:$0.5390
    • 2500:$0.5030
    • 5000:$0.4780
    • 10000:$0.4670
    SI4420BDY-T1-GE3Vishay Intertechnologies 1458
      Imagen Parte # Descripción
      SI4420BDY-T1-E3

      Mfr.#: SI4420BDY-T1-E3

      OMO.#: OMO-SI4420BDY-T1-E3

      		 MOSFET 30V 13.5A 0.0085Ohm
      SI4420BDY-T1-GE3

      Mfr.#: SI4420BDY-T1-GE3

      OMO.#: OMO-SI4420BDY-T1-GE3

      		 MOSFET 30V 13.5A 2.5W 8.5mohm @ 10V
      SI4420BDY-T1-E3-CUT TAPE

      Mfr.#: SI4420BDY-T1-E3-CUT TAPE

      OMO.#: OMO-SI4420BDY-T1-E3-CUT-TAPE-1190

      		 Nuevo y original
      SI4420BDY

      Mfr.#: SI4420BDY

      OMO.#: OMO-SI4420BDY-1190

      		 Nuevo y original
      SI4420BDY-T1

      Mfr.#: SI4420BDY-T1

      OMO.#: OMO-SI4420BDY-T1-1190

      		 Nuevo y original
      SI4420BDY-T1-E3

      Mfr.#: SI4420BDY-T1-E3

      OMO.#: OMO-SI4420BDY-T1-E3-VISHAY

      		 MOSFET N-CH 30V 9.5A 8-SOIC
      SI4420BDY-T1-E3-PBF

      Mfr.#: SI4420BDY-T1-E3-PBF

      OMO.#: OMO-SI4420BDY-T1-E3-PBF-1190

      		 Nuevo y original
      SI4420BDY-T1-GE3

      Mfr.#: SI4420BDY-T1-GE3

      OMO.#: OMO-SI4420BDY-T1-GE3-VISHAY

      		 MOSFET N-CH 30V 9.5A 8-SOIC
      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de SI4420BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,48 US$
      0,48 US$
      10
      0,45 US$
      4,55 US$
      100
      0,43 US$
      43,07 US$
      500
      0,41 US$
      203,35 US$
      1000
      0,38 US$
      382,80 US$
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