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NTTFS5116PLTWG

NTTFS5116PLTWG
Mfr. #:
NTTFS5116PLTWG
Fabricante:
ON Semiconductor
Descripción:
MOSFET PFET U8FL 60V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NTTFS5116PLTWG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTTFS5116PLTWG DatasheetNTTFS5116PLTWG Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
WDFN-8
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
5.7 A
Rds On - Resistencia de la fuente de drenaje:
72 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
4.5 V
Qg - Carga de puerta:
25 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
40 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
NTTFS5116PL
Tipo de transistor:
1 P-Channel
Marca:
EN Semiconductor
Transconductancia directa - Mín .:
11 S
Otoño:
37 ns
Tipo de producto:
MOSFET
Hora de levantarse:
58 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
30 ns
Tiempo típico de retardo de encendido:
15 ns
Tags
NTTFS51, NTTFS5, NTTFS, NTTF, NTT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Power MOSFET -60V -20A 52 mOhm Single P-Channel u8FL Logic Level / REEL RoHS Compliant: Yes
***emi
Single P-Channel Power MOSFET -60V, -20A, 52mΩ
***Yang
Trans MOSFET P-CH 60V 5.7A 8-Pin WDFN - Tape and Reel
***roFlash
Power Field-Effect Transistor, 5.7A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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*** Source Electronics
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***ure Electronics
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***sible Micro
XTR,PWR,MFT,FDD4243,DPK -40V,-14A,40mOHM,P-CHNL POWER MOSFET,D-PAK PKG
***roFlash
Power Field-Effect Transistor, 6.7A I(D), 40V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-40V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -14 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42
***ure Electronics
P-Channel 60 V 52 mOhm 3.2 W Surface Mount Power Mosfet - WDFN-8
***emi
Single P-Channel Power MOSFET -60V, -14A, 52mΩ
***nell
MOSFET, AEC-Q101, P-CH, -60V, WDFN; Transistor Polarity: P Channel; Continuous Drain Current Id: -14A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 21W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
P-Channel 60 V 14 A 52 mOhm Surface Mount Power Mosfet - WDFN-8 (3.3 x 3.3)
***emi
Single P-Channel Power MOSFET -60V, -14A, 52mΩ
***ment14 APAC
MOSFET, P-CH, -60V, -6A, WDFN-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Source Voltage Vds:-60V; On Resistance
***nell
MOSFET, P-CH, -60V, -6A, WDFN-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -6A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 3.2W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Si4447ADY Series 40 V 7.2 A 45 mOhm Surface Mount P-Channel Mosfet - SOIC-8
***roFlash
Small Signal Field-Effect Transistor, 7.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:4.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***ure Electronics
SiA441DJ Series 40 V 12 A Surface Mount P-Channel Mosfet - PowerPAK SC-70-6L
***et
Trans MOSFET P-CH 40V 6.6A 6-Pin PowerPAK SC-70 T/R
***roFlash
Power Field-Effect Transistor, 12A I(D), 40V, 0.047ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***enic
PowerPAK SC-70-6 Single MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistors
***ure Electronics
Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
Parte # Mfg. Descripción Valores Precio
NTTFS5116PLTWG
DISTI # 32333843		ON SemiconductorTrans MOSFET P-CH 60V 5.7A 8-Pin WDFN T/R
RoHS: Compliant		5000
  • 5000:$0.3176
NTTFS5116PLTWG
DISTI # NTTFS5116PLTWGOSCT-ND		ON SemiconductorMOSFET P-CH 60V 5.7A 8-WDFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9940In Stock
  • 1000:$0.3916
  • 500:$0.4895
  • 100:$0.6608
  • 10:$0.8570
  • 1:$0.9800
NTTFS5116PLTWG
DISTI # NTTFS5116PLTWGOSDKR-ND		ON SemiconductorMOSFET P-CH 60V 5.7A 8-WDFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9940In Stock
  • 1000:$0.3916
  • 500:$0.4895
  • 100:$0.6608
  • 10:$0.8570
  • 1:$0.9800
NTTFS5116PLTWG
DISTI # NTTFS5116PLTWGOSTR-ND		ON SemiconductorMOSFET P-CH 60V 5.7A 8-WDFN
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 25000:$0.3024
  • 10000:$0.3089
  • 5000:$0.3208
NTTFS5116PLTWG
DISTI # V36:1790_07311639		ON SemiconductorTrans MOSFET P-CH 60V 5.7A 8-Pin WDFN T/R
RoHS: Compliant		0
    NTTFS5116PLTWG
    DISTI # NTTFS5116PLTWG    		ON SemiconductorTrans MOSFET P-CH 60V 5.7A 8-Pin WDFN (Alt: NTTFS5116PLTWG)
    RoHS: Compliant
    Min Qty: 5000    		Europe - 0
    • 50000:€0.2729
    • 30000:€0.2939
    • 20000:€0.3189
    • 10000:€0.3479
    • 5000:€0.4249
    NTTFS5116PLTWG
    DISTI # NTTFS5116PLTWG    		ON SemiconductorTrans MOSFET P-CH 60V 5.7A 8-Pin WDFN - Tape and Reel (Alt: NTTFS5116PLTWG)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 50000:$0.2659
    • 30000:$0.2729
    • 20000:$0.2759
    • 10000:$0.2799
    • 5000:$0.2819
    NTTFS5116PLTWG
    DISTI # 24T3499    		ON SemiconductorPFET U8FL 60V 5.4A 52MOHM / REEL0
    • 10000:$0.2900
    • 5000:$0.2980
    • 1000:$0.3630
    • 500:$0.4230
    • 250:$0.4360
    • 100:$0.4490
    • 25:$0.6870
    • 1:$0.8790
    NTTFS5116PLTWG
    DISTI # 863-NTTFS5116PLTWG    		ON SemiconductorMOSFET PFET U8FL 60V
    RoHS: Compliant    		25885
    • 1:$0.8100
    • 10:$0.6700
    • 100:$0.4320
    • 1000:$0.3460
    • 5000:$0.2920
    • 10000:$0.2810
    • 25000:$0.2700
    Imagen Parte # Descripción
    24LC256T-I/SN

    Mfr.#: 24LC256T-I/SN

    OMO.#: OMO-24LC256T-I-SN

    		 EEPROM 32kx8 - 2.5V
    REF3440IDBVR

    Mfr.#: REF3440IDBVR

    OMO.#: OMO-REF3440IDBVR

    		 Voltage References REF3440 - 6 PPM/C IQ 95UA 4V
    LMR33630ADDAR

    Mfr.#: LMR33630ADDAR

    OMO.#: OMO-LMR33630ADDAR

    		 Switching Voltage Regulators 36V 3A 400KHZ REGULATOR
    LT8364IDE#PBF

    Mfr.#: LT8364IDE#PBF

    OMO.#: OMO-LT8364IDE-PBF

    		 Switching Voltage Regulators Low IQ Boost/SEPIC/ Inverting Converter with 4A, 60V Switch
    TLV70212QDSERQ1

    Mfr.#: TLV70212QDSERQ1

    OMO.#: OMO-TLV70212QDSERQ1

    		 LDO Voltage Regulators LDO
    REF3440IDBVR

    Mfr.#: REF3440IDBVR

    OMO.#: OMO-REF3440IDBVR-TEXAS-INSTRUMENTS

    		 REF3440 - 6 PPM/C IQ 95UA 4.1V
    24LC256T-I/SN

    Mfr.#: 24LC256T-I/SN

    OMO.#: OMO-24LC256T-I-SN-MICROCHIP-TECHNOLOGY

    		 EEPROM 32kx8 - 2.5V
    2311765-1

    Mfr.#: 2311765-1

    OMO.#: OMO-2311765-1-TE-CONNECTIVITY

    		 CONN RCPT HD20 R/A 9P S/L .318
    LMR33630ADDAR

    Mfr.#: LMR33630ADDAR

    OMO.#: OMO-LMR33630ADDAR-TEXAS-INSTRUMENTS

    		 IC REG BUCK ADJUSTABLE 3A 8SOPWR
    TLV70212QDSERQ1

    Mfr.#: TLV70212QDSERQ1

    OMO.#: OMO-TLV70212QDSERQ1-TEXAS-INSTRUMENTS

    		 Low-Dropout Regulato
    Disponibilidad
    Valores:
    26
    En orden:
    2009
    Ingrese la cantidad:
    El precio actual de NTTFS5116PLTWG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,81 US$
    0,81 US$
    10
    0,67 US$
    6,70 US$
    100
    0,43 US$
    43,20 US$
    1000
    0,35 US$
    346,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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