EPC2019

Mfr. #:: EPC2019
Fabricante:: EPC
Descripción:: GAN TRANS 200V 8.5A BUMPED DIE
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: EPC2019 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Tags: EPC201, EPC20, EPC2, EPC

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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EPC2019 Descripción

*** Stop Electro: Power Field-Effect Transistor, 8.5A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET

*** International: TRANS GAN 200V 8.5A BUMPED DIE

***i-Key: GANFET N-CH 200V 8.5A DIE

***ure Electronics: Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R

***eco: IRF630NSTRLPBF,MOSFET, 200V, 9 .5A, 300 MOHM, 23.3 NC QG, D2

***roFlash: Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Tra; N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

***nell: MOSFET, N-CH, 200V, 9.3A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.3A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 82W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.3 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 300 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 27 / Turn-ON Delay Time ns = 7.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 82

***ure Electronics: Single N-Channel 200 V 0.38 Ohm 18 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N, 200V, 9.4A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK

***ure Electronics: Single N-Channel 200 V 0.32 Ohm 21 nC 2.5 W DMOS SMT Mosfet - TO-252-3

***ment14 APAC: MOSFET, N-CH, 200V, 9A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Source Voltage Vds:200V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):0.22ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V; Package/Case:3-D-PAK ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 200V, 9A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.5W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK

***sible Micro: XTR,PWR,MFT,FQD12N20,DPK 200V,9.0A,N-CHNL MOSFET RDS(on)=0.28 OHM,DPAK PKG

***ure Electronics: N-Channel 200 V 0.28 Ohm Surface Mount QFET Mosfet - DPAK

***r Electronics: Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N-CH, 200V, 9A, TO-252-3; Transi; MOSFET, N-CH, 200V, 9A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:3Pins

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..

***ical: Trans MOSFET N-CH 200V 9A Automotive 3-Pin(2+Tab) DPAK T/R

*** Stop Electro: Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***enic: 200V 9A 220m´Î@10V4.5A 55W 2V@250uA 17pF@25V N Channel 830pF@25V 16nC@5V -55¡Í~+150¡Í@(Tj) DPAK-3 MOSFETs ROHS

***ark: 200V /9A/0.28 OHM @ VGS=10V / TAPE REEL

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
EPC2019 DISTI # 917-1087-1-ND	Efficient Power Conversion	GAN TRANS 200V 8.5A BUMPED DIE RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12472In Stock	500:$2.1543 250:$2.4009 100:$2.6605 25:$2.9200 10:$3.2450 1:$3.6300
EPC2019 DISTI # 917-1087-6-ND	Efficient Power Conversion	GAN TRANS 200V 8.5A BUMPED DIE RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12472In Stock	500:$2.1543 250:$2.4009 100:$2.6605 25:$2.9200 10:$3.2450 1:$3.6300
EPC2019 DISTI # 917-1087-2-ND	Efficient Power Conversion	GAN TRANS 200V 8.5A BUMPED DIE RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	12000In Stock	2000:$1.6758 1000:$1.7640
EPC9014 DISTI # 917-1056-ND	Efficient Power Conversion	BOARD DEV FOR EPC2019 200V EGAN RoHS: Compliant Min Qty: 1 Container: Bulk	38In Stock	1:$90.0000
EPC9513 DISTI # 917-1172-ND	Efficient Power Conversion	EVAL BRD WIRELESS POWER REC 5 V RoHS: Compliant Min Qty: 1 Container: Bulk	18In Stock	1:$168.7500
EPC9053 DISTI # 917-1116-ND	Efficient Power Conversion	BOARD DEV EPC2019 EGAN FET RoHS: Compliant Min Qty: 1 Container: Box	15In Stock	1:$143.7500
EPC9129 DISTI # 917-1189-ND	Efficient Power Conversion	CLASS 4 WIRELESS POWER DEMONSTRA RoHS: Compliant Min Qty: 1 Container: Bulk	13In Stock	1:$907.2000
EPC9515 DISTI # 917-1178-ND	Efficient Power Conversion	WIRELESS POWER RECEIVE DEMO CIRC RoHS: Compliant Min Qty: 1 Container: Bulk	9In Stock	1:$168.7500
EPC9127 DISTI # 917-1187-ND	Efficient Power Conversion	CLASS 2 WIRELESS POWER DEMONSTRA RoHS: Compliant Min Qty: 1 Container: Bulk	5In Stock	1:$907.2000
EPC9128 DISTI # 917-1188-ND	Efficient Power Conversion	CLASS 3 WIRELESS POWER DEMONSTRA RoHS: Compliant Min Qty: 1 Container: Bulk	5In Stock	1:$907.2000

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Disponibilidad

Valores:: Available
En orden:: 4000
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El precio actual de EPC2019 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

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Precio unitario
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1: ~~0,00 US$~~; ~~0,00 US$~~

10: ~~0,00 US$~~; ~~0,00 US$~~

100: ~~0,00 US$~~; ~~0,00 US$~~

500: ~~0,00 US$~~; ~~0,00 US$~~

1000: ~~0,00 US$~~; ~~0,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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EPC2019

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes