GS8161Z18DD-250

GS8161Z18DD-250
Mfr. #:
GS8161Z18DD-250
Fabricante:
GSI Technology
Descripción:
SRAM 2.5 or 3.3V 1M x 18 18M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8161Z18DD-250 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8161Z18DD-250 más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
N
Tamaño de la memoria:
18 Mbit
Organización:
1 M x 18
Tiempo de acceso:
5.5 ns
Frecuencia máxima de reloj:
250 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
210 mA, 230 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-119
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS816218DB
Escribe:
Tubería / Flujo a través
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
21
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
SyncBurst
Tags
GS8161Z18DD-25, GS8161Z18DD-2, GS8161Z18DD, GS8161Z18D, GS8161Z1, GS8161Z, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
Imagen Parte # Descripción
GS8161Z18DGD-200IV

Mfr.#: GS8161Z18DGD-200IV

OMO.#: OMO-GS8161Z18DGD-200IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z32DGD-250

Mfr.#: GS8161Z32DGD-250

OMO.#: OMO-GS8161Z32DGD-250

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161Z36DD-150I

Mfr.#: GS8161Z36DD-150I

OMO.#: OMO-GS8161Z36DD-150I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161Z32DGD-250V

Mfr.#: GS8161Z32DGD-250V

OMO.#: OMO-GS8161Z32DGD-250V

SRAM 1.8/2.5V 512K x 32 16M
GS8161Z36DGT-200IV

Mfr.#: GS8161Z36DGT-200IV

OMO.#: OMO-GS8161Z36DGT-200IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161Z18DGD-150IV

Mfr.#: GS8161Z18DGD-150IV

OMO.#: OMO-GS8161Z18DGD-150IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z36DGT-375

Mfr.#: GS8161Z36DGT-375

OMO.#: OMO-GS8161Z36DGT-375

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161Z18DGT-400I

Mfr.#: GS8161Z18DGT-400I

OMO.#: OMO-GS8161Z18DGT-400I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z36BGT-200I

Mfr.#: GS8161Z36BGT-200I

OMO.#: OMO-GS8161Z36BGT-200I-1190

Nuevo y original
GS8161Z36BGT-250I

Mfr.#: GS8161Z36BGT-250I

OMO.#: OMO-GS8161Z36BGT-250I-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de GS8161Z18DD-250 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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