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FDC855N

FDC855N
Mfr. #:
FDC855N
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 30V Single NCh Logic Level PowerTrench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDC855N Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SSOT-6
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
6.1 A
Rds On - Resistencia de la fuente de drenaje:
27 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.6 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
PowerTrench
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
2.9 mm
Producto:
Pequeña señal MOSFET
Serie:
FDC855N
Tipo de transistor:
1 N-Channel
Ancho:
1.6 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
2 ns
Tipo de producto:
MOSFET
Hora de levantarse:
2 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
14 ns
Tiempo típico de retardo de encendido:
6 ns
Unidad de peso:
0.001058 oz
Tags
FDC855N, FDC85, FDC8, FDC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel, PowerTrench® MOSFET, Logic Level, 30V, 6.1A, 27mΩ
***ure Electronics
N-Channel 30 V 27 mOhm Surface Mount Logic Level PowerTrench® MOSFET-SSOT-6
***rchild Semiconductor
This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Semiconductor’s advanced PowerTrench® process, this device possesses minimized on-state resistance to optimize the power consumption. They are ideal for applications where in-line power loss is critical.
Parte # Mfg. Descripción Valores Precio
FDC855N
DISTI # V72:2272_06298591		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R3000
  • 3000:$0.2005
  • 1000:$0.2269
  • 500:$0.2454
  • 250:$0.2727
  • 100:$0.3030
  • 25:$0.4833
  • 10:$0.5413
  • 1:$0.6484
FDC855N
DISTI # V36:1790_06298591		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R0
  • 3000000:$0.2100
  • 1500000:$0.2101
  • 300000:$0.2158
  • 30000:$0.2237
  • 3000:$0.2249
FDC855N
DISTI # FDC855NCT-ND		ON SemiconductorMOSFET N-CH 30V 6.1A 6-SSOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2940In Stock
  • 1000:$0.2541
  • 500:$0.3288
  • 100:$0.4185
  • 10:$0.5610
  • 1:$0.6500
FDC855N
DISTI # FDC855NDKR-ND		ON SemiconductorMOSFET N-CH 30V 6.1A 6-SSOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2940In Stock
  • 1000:$0.2541
  • 500:$0.3288
  • 100:$0.4185
  • 10:$0.5610
  • 1:$0.6500
FDC855N
DISTI # FDC855NTR-ND		ON SemiconductorMOSFET N-CH 30V 6.1A 6-SSOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.1857
  • 15000:$0.1959
  • 6000:$0.2104
  • 3000:$0.2249
FDC855N
DISTI # 33716836		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R78000
  • 3000:$0.2249
FDC855N
DISTI # 33709824		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R3000
  • 42:$0.6484
FDC855N
DISTI # FDC855N		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R (Alt: FDC855N)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1489
  • 18000:€0.1599
  • 12000:€0.1739
  • 6000:€0.1899
  • 3000:€0.2319
FDC855N
DISTI # FDC855N		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R - Bulk (Alt: FDC855N)
RoHS: Compliant
Min Qty: 1250
Container: Bulk		Americas - 0
  • 12500:$0.2459
  • 6250:$0.2529
  • 3750:$0.2559
  • 2500:$0.2589
  • 1250:$0.2609
FDC855N
DISTI # FDC855N		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R - Tape and Reel (Alt: FDC855N)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1909
  • 18000:$0.1959
  • 12000:$0.1979
  • 6000:$0.2009
  • 3000:$0.2019
FDC855N
DISTI # 84W8850		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 84W8850)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1000:$0.2650
  • 500:$0.2900
  • 250:$0.3160
  • 100:$0.3420
  • 50:$0.4480
  • 25:$0.5550
  • 1:$0.6770
FDC855N
DISTI # 84W8850		ON SemiconductorMOSFET, N CHANNEL, 30V, 0.0207OHM, 6.1A, SUPERSOT-6,Transistor Polarity:N Channel,Continuous Drain Current Id:6.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0207ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:6Pins RoHS Compliant: Yes3
  • 1000:$0.2650
  • 500:$0.2900
  • 250:$0.3160
  • 100:$0.3420
  • 50:$0.4480
  • 25:$0.5550
  • 1:$0.6770
FDC855N
DISTI # 88M9925		ON SemiconductorMOSFET Transistor, N Channel, 6.1 A, 30 V, 0.0207 ohm, 10 V, 2 V RoHS Compliant: Yes0
  • 30000:$0.1830
  • 18000:$0.1880
  • 12000:$0.1930
  • 6000:$0.1980
  • 3000:$0.2020
  • 1:$0.2070
FDC855N
DISTI # 512-FDC855N		ON SemiconductorMOSFET 30V Single NCh Logic Level PowerTrench
RoHS: Compliant		6000
  • 1:$0.6000
  • 10:$0.4990
  • 100:$0.3050
  • 1000:$0.2350
  • 3000:$0.2010
  • 9000:$0.1870
  • 24000:$0.1770
  • 45000:$0.1730
FDC855NFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 6.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
RoHS: Compliant		50242
  • 1000:$0.2600
  • 500:$0.2800
  • 100:$0.2900
  • 25:$0.3000
  • 1:$0.3200
FDC855NFairchild Semiconductor CorporationSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6.1A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-193AA25
  • 9:$0.4500
  • 1:$0.6000
FDC855NFairchild Semiconductor Corporation30V,6.1A,N-Channel MOSFET1850
  • 1:$0.2000
  • 100:$0.2000
  • 500:$0.2000
  • 1000:$0.2000
FDC855N
DISTI # 2459564		ON SemiconductorMOSFET, N CHANNEL, 30V, 0.0207OHM, 6.1A, SUPERSOT-6
RoHS: Compliant		3003
  • 45000:$0.2670
  • 24000:$0.2730
  • 9000:$0.2880
  • 3000:$0.3100
  • 1000:$0.3620
  • 100:$0.4700
  • 10:$0.7680
  • 1:$0.9230
FDC855N
DISTI # 2459564		ON SemiconductorMOSFET, N CHANNEL, 30V, 0.0207OHM, 6.1A,3003
  • 250:£0.2860
  • 100:£0.3090
  • 50:£0.4060
  • 25:£0.5030
  • 1:£0.6130
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Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de FDC855N es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,60 US$
0,60 US$
10
0,50 US$
4,99 US$
100
0,30 US$
30,50 US$
1000
0,24 US$
235,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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