PCG30N60A4W

PCG30N60A4W
Mfr. #:
PCG30N60A4W
Fabricante:
Eaton Corporation
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PCG30N60A4W Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
PCG3, PCG
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
600V, SMPS IGBT
***rchild Semiconductor
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.
Parte # Mfg. Descripción Valores Precio
PCG33000F
DISTI # 51K5799
Eaton CorporationTYPE PCG BREAKER FRAME ONLY 3P 3000A 600VAC MAX 100KAIC @6000
  • 50:$144,811.5200
  • 25:$149,946.6900
  • 10:$153,027.7700
  • 5:$156,108.8800
  • 1:$162,271.0600
Imagen Parte # Descripción
PCG30N60A4W

Mfr.#: PCG30N60A4W

OMO.#: OMO-PCG30N60A4W-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de PCG30N60A4W es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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Ext. Precio
1
0,00 US$
0,00 US$
10
0,00 US$
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100
0,00 US$
0,00 US$
500
0,00 US$
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1000
0,00 US$
0,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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