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| PartNumber | SI4622DY-T1-GE3 | SI4622DY-T1-E3 | SI4622DY-T1-E3 GE3 |
| Description | MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 8.0A 3.3/3.1W 16/26.4mohm @ 10V | |
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Tape & Reel (TR) | - |
| Series | SI4 | SkyFETR, TrenchFETR | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI4622DY-GE3 | - | - |
| Unit Weight | 0.006596 oz | - | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SO | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 3.3W, 3.1W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 2458pF @ 15V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 8A | - |
| Rds On Max Id Vgs | - | 16 mOhm @ 9.6A, 10V | - |
| Vgs th Max Id | - | 2.5V @ 1mA | - |
| Gate Charge Qg Vgs | - | 60nC @ 10V | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4622DY-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3 | |
Vishay |
SI4622DY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 8.0A 3.3/3.1W 16/26.4mohm @ 10V | |
| SI4622DY-T1-E3 | RF Bipolar Transistors MOSFET 30V 8.0A 3.3/3.1W 16/26.4mohm @ 10V | ||
| SI4622DY-T1-E3 GE3 | Nuevo y original |