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| PartNumber | SI3456DDV-T1-GE3 | SI3456DDV-T1-GT3 | SI3456DDV-T1-GE3-CUT TAPE |
| Description | MOSFET 30V Vds 20V Vgs TSOP-6 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSOP-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 6.3 A | - | - |
| Rds On Drain Source Resistance | 40 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.7 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 15 S | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11 ns | - | - |
| Typical Turn On Delay Time | 4 ns | - | - |
| Part # Aliases | SI3456DDV-GE3 | - | - |
| Unit Weight | 0.000705 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3456DDV-T1-GE3 | MOSFET 30V Vds 20V Vgs TSOP-6 | |
Vishay |
SI3456DDV-T1-GE3 | MOSFET N-CH 30V 6.3A 6-TSOP | |
| SI3456DDV-T1-GT3 | Nuevo y original | ||
| SI3456DDV-T1-GE3-CUT TAPE | Nuevo y original |