BUK96180

BUK96180-100A,118 vs BUK96180-100A.118 vs BUK96180-100A

 
PartNumberBUK96180-100A,118BUK96180-100A.118BUK96180-100A
DescriptionMOSFET TAPE13 PWR-MOSTransistor: N-MOSFET, unipolar, 100V, 7.7A, 54W, D2PAK
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance173 mOhms--
Vgs Gate Source Voltage15 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation54 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height4.5 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width9.4 mm--
BrandNexperia--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time112 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time9 ns--
Part # Aliases/T3 BUK96180-100A--
Unit Weight0.050375 oz--
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
BUK96180-100A,118 MOSFET TAPE13 PWR-MOS
BUK96180-100A,118 RF Bipolar Transistors MOSFET TAPE13 PWR-MOS
BUK96180-100A118 Now Nexperia BUK96180-100A - Power Field-Effect Transistor, 11A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK96180-100A.118 Transistor: N-MOSFET, unipolar, 100V, 7.7A, 54W, D2PAK
BUK96180-100A Nuevo y original
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