100 W RF Power Transistors in TO-220 Package

By NXP Semiconductors 171

100 W RF Power Transistors in TO-220 Package

NXP’s MRF101AN and MRF101BN 100 W RF power transistors are designed for use in VHF/UHF communications, VHF TV broadcasts, and aerospace applications as well as industrial, scientific, and medical applications. The devices are exceptionally rugged and exhibit high performance up to 250 MHz.

LDMOS technology is now available for these RF transistors in ubiquitous TO-220 power packages, enabling customers to utilize well-established assembly processes. These transistors are offered with very compact reference circuits which are reusable from 1.8 MHz to 250 MHz resulting in considerable savings and fast time to market.


  • 100 W power rating (continuous wave)
  • 1.8 MHz to 250 MHz
  • 50 V LDMOS
  • Unmatched input and output
  • 1.1°C/W thermal resistance
  • Extreme ruggedness: handles 65:1 VSWR
  • Warranted availability until 2033 minimum
  • Standard TO-220 over-molded plastic package provides low-cost, flexible mounting options
  • Reference circuits share the same PCB layout, enabling design reuse over frequencies
  • Mirrored pin configurations support push-pull designs
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI and other medical applications
    • Industrial heating, welding, and drying
  • Broadcasts
    • Radio broadcasts
    • VHF TV broadcasts
  • Mobile radios
    • VHF base stations
  • HF and VHF communications
  • Switch mode power supplies