By Vishay Semiconductor / Opto Division 50
Vishay Intertechnology, Inc. is broadening its optoelectronics portfolio with the introduction of high-speed silicon PIN photodiodes with high radiant sensitivity and fast switching times in clear- and black-epoxy T1 plastic packages. Offering 3 mm lenses, the TEFD4300 and TEFD4300F feature a high reverse photo current of 17 µA and a ± 20° angle of half sensitivity.
These devices are optimized for data transmission, photo interrupters, optical switches, encoders, and position sensors in metering applications. For infrared and visible light sources, the TEFD4300 is a clear epoxy device with a sensitivity range of 350 nm to 1120 nm. For light sources in the infrared wavelength range of 770 nm to 1070 nm, the TEFD4300F is a black epoxy device with a daylight blocking filter matched with 850 nm to 950 nm IR emitters.
The photodiodes offer fast switching times down to 10 ns at low load resistor values, a low 0.1 %/K temperature coefficient of light current, temperature range of -40°C to +100°C, and a 950 nm wavelength of peak sensitivity.
The photo detectors support lead (Pb)-free processing in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC, and conform to Vishay "Green" environmental specifications.